1
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+2
-0.6
If WL is the Word Line and BL the Bit Line, an SRAM cell is shown in
A
GATE ECE 2014 Set 3 Digital Circuits - Semiconductor Memories Question 2 English Option 1
B
GATE ECE 2014 Set 3 Digital Circuits - Semiconductor Memories Question 2 English Option 2
C
GATE ECE 2014 Set 3 Digital Circuits - Semiconductor Memories Question 2 English Option 3
D
GATE ECE 2014 Set 3 Digital Circuits - Semiconductor Memories Question 2 English Option 4
2
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown in Figure, A is a parallel in, parallel-out 4-bit register, which loads at the rising edge of the clock C. The input lines are connected to a 4-bit bus, W. Its output acts as the input to a 16×4 ROM whose output is floating when the enable input E is 0. A partial table of the contents of the ROM is as follows GATE ECE 2003 Digital Circuits - Semiconductor Memories Question 3 English 1

The clock to the register is shown, and the data on the W bus at time t$$_1$$ is 0110. The data on the bus at time t$$_2$$ is

GATE ECE 2003 Digital Circuits - Semiconductor Memories Question 3 English 2 GATE ECE 2003 Digital Circuits - Semiconductor Memories Question 3 English 3
A
1111
B
1011
C
1000
D
0010
3
GATE ECE 2002
MCQ (Single Correct Answer)
+2
-0.6
If the input X$$_3$$, X$$_2$$, X$$_1$$, X$$_0$$ to the ROM in figure 2.12 are 8-4-2-1 BCD numbers, then the outpus are Y$$_3$$,Y$$_2$$, Y$$_1$$, Y$$_0$$ are GATE ECE 2002 Digital Circuits - Semiconductor Memories Question 4 English
A
gray code numbers
B
2-4-2-1 BCD numbers
C
excess-3 code numbeR
D
none of the above.
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