1
GATE ECE 2005
+2
-0.6
For an n-channel MOSFET and its transfer curve shown in the figure, the threshold voltage is
A
1 V and the device is in active region
B
-1 V and the device is in saturation region.
C
1 V and the device is in saturation region.
D
-1 V and the device is in active region.
2
GATE ECE 2003
+2
-0.6
The action of a JFET in its equivalent circuit can be best represented as a
A
current controlled current source
B
current controlled voltage source
C
voltage controlled voltage source
D
voltage controlled current source
3
GATE ECE 2002
+2
-0.6
Consider the following statements in connection with the CMOS inverter in the Figure. Where both the MOSFETS are of enhancement type and both have a threshold voltage of 2V.

Statement 1: T1 conducts when Vi $$\ge \,2\,V$$.
Statement 2: T1 is always in saturation when $${V_0}\, = \,0\,V$$.

Which of the following is correct?

A
only Statement 1 is true
B
Only Statement 2 is true
C
Both the statements are true
D
Both the statements are FALSE
4
GATE ECE 1992
+2
-0.6
An n-channel JFET has a pinch-off voltage of Vp = -5V. VDS(max) = 20V and gm = 2mA/V. The minimum 'ON' resistance is achieved in the JFET for
A
$${V_{GS}} = -7V$$ and $${V_{DS}} = 0V$$
B
$${V_{GS}} = 7V$$ and $${V_{DS}} = 0V$$
C
$${V_{GS}} = 0V$$ and $${V_{DS}} = 20V$$
D
$${V_{GS}} = -7V$$ and $${V_{DS}} = 20V$$
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