1
GATE ECE 1996
MCQ (Single Correct Answer)
+1
-0.3
Each cell of a static Random Access Memory Contains
A
6 MOS transistors.
B
4 MOS transistors and 2 capacitors
C
2 MOS transistors and 4 capacitors
D
1 MOS transistors and 1 capacitors
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The minimum number of MOS transistors required to make a dynamic RAM cell is
A
1
B
2
C
3
D
4
3
GATE ECE 1994
MCQ (Single Correct Answer)
+1
-0.3
A PLA can be used
A
as a microprocessor
B
as a dynamic memory
C
to realize a sequential logic
D
to realize a combinational logic
4
GATE ECE 1994
MCQ (Single Correct Answer)
+1
-0.3
A dynamic RAM consists of
A
6 transistors
B
2 transistors and 2 capacitor
C
1 transistors and 1 capacitor
D
2 capacitor only
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