1
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
For small signal a.c. operation, a practical forward biased diode can be modeled as
A
a resistance and a capacitance in series
B
an ideal diode and resistance in parallel
C
a resistance and an ideal diode in series
D
a resistance
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The diffusion potential across a P-N junction
A
decreases with increasing doping concentration
B
increases with decreasing band gap
C
does not depend on doping concentration
D
increases with increase in doping concentrations
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
A zener diode works on the principle of
A
tunneling of charge carriers across the junction
B
thermo ionic emission
C
diffusion of charge carriers across the junction
D
hopping of charge carriers across the junction
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The depletion capacitance, CJ, of an abrupt P-N junction with constant doping on either side varies with reverse bias, VR , as
A
CJ $$\propto$$ VR
B
CJ $$\propto$$ VR-1
C
CJ $$\propto$$ VR-1/2
D
CJ $$\propto$$ VR-1/3
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