1
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
For small signal a.c. operation, a practical forward biased diode can be modeled as
A
a resistance and a capacitance in series
B
an ideal diode and resistance in parallel
C
a resistance and an ideal diode in series
D
a resistance
2
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
The static characteristic of an adequately forward biased p-n junction is a straight line, if the plot is of
A
log I vs. log V
B
log I vs. V
C
I vs. log V
D
I vs. V
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The depletion capacitance, CJ, of an abrupt P-N junction with constant doping on either side varies with reverse bias, VR , as
A
CJ $$\propto$$ VR
B
CJ $$\propto$$ VR-1
C
CJ $$\propto$$ VR-1/2
D
CJ $$\propto$$ VR-1/3
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The diffusion potential across a P-N junction
A
decreases with increasing doping concentration
B
increases with decreasing band gap
C
does not depend on doping concentration
D
increases with increase in doping concentrations
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