1
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
For an n-channel MOSFET and its transfer curve shown in the figure, the threshold voltage is GATE ECE 2005 Analog Circuits - FET and MOSFET Question 17 English 1 GATE ECE 2005 Analog Circuits - FET and MOSFET Question 17 English 2
A
1 V and the device is in active region
B
-1 V and the device is in saturation region.
C
1 V and the device is in saturation region.
D
-1 V and the device is in active region.
2
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
For an npn transistor connected as shown in the figure, VBE = 0.7 volts. Given that reverse saturation current of the junction at room temperature $${300^0}$$ K is $${10^{ - 13}}\,{\rm A}$$, the emitter current is $$\left( {\eta \, = \,1} \right)$$ GATE ECE 2005 Analog Circuits - Bipolar Junction Transistor Question 40 English
A
30 mA
B
39 mA
C
49 mA
D
20 mA
3
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
The circuit using a BJT with β = 50 and VBE = 0.7 V is shown in the figure. The base current IB and collector voltage VC are respectively GATE ECE 2005 Analog Circuits - Bipolar Junction Transistor Question 39 English
A
43 μA and 11.4 Volts
B
40 μA and 16 Volts
C
45 μA and 11 Volts
D
50 μA and 10 Volts
4
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
A symmetric three-level midtread quantizer is to be designed assuming equiprobable occurrence of all quantization levels.

The quantization noise power for the quantization region between –a and +a in the figure is

A
$${4 \over 81}$$
B
$${1 \over 9}$$
C
$${5 \over 81}$$
D
$${2 \over 81}$$
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