GATE ECE 2005 | GATE ECE Year Wise Previous Years Questions

GATE ECE 2005

MCQ (Single Correct Answer)

-0.6

For an npn transistor connected as shown in the figure, V_BE = 0.7 volts. Given that reverse saturation current of the junction at room temperature $${300^0}$$ K is $${10^{ - 13}}\,{\rm A}$$, the emitter current is $$\left( {\eta \, = \,1} \right)$$ GATE ECE 2005 Analog Circuits - Bipolar Junction Transistor Question 36 English

GATE ECE 2005 Analog Circuits - Bipolar Junction Transistor Question 36 English

30 mA

39 mA

49 mA

20 mA

GATE ECE 2005

MCQ (Single Correct Answer)

-0.6

Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$ GATE ECE 2005 Analog Circuits - FET and MOSFET Question 14 English

Z_i and Z_o of the circuit are respectively

2 $$M\Omega $$ and 2 $$K\Omega $$

2 $$M\Omega $$ and 20/11 $$K\Omega $$

infinity and 2 $$M\Omega $$

infinity and 20/11$$M\Omega $$

GATE ECE 2005

MCQ (Single Correct Answer)

-0.6

Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$ GATE ECE 2005 Analog Circuits - FET and MOSFET Question 12 English

Transconductance in milli-Siemens (mS) and voltage gain of the amplifier are respectively.

1.875 mS and 3.41

1.875 mS and -3.41

3.3 mS and -6

3.3 mS and 6

GATE ECE 2005

MCQ (Single Correct Answer)

-0.6

Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$ GATE ECE 2005 Analog Circuits - FET and MOSFET Question 13 English

I_D and V_DS under DC conditions are respectively

5.625 mA and 8.75 V

7.500 mA and 5.00V

4.500 mA and 11.00V

6.250 mA and 7.50V

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