1
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
The band gap of Silicon at room temperature is:
A
1.3 eV
B
0.7 eV
C
1.1 eV
D
1.4 eV
2
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
A silicon sample 'A' is doped with 1018 atoms/cm3 of Boron. Another sample 'B' of identical dimensions is doped with 1018 atoms/cm3 of Phosphorus. The ratio of electron to hole mobility is 1/3. The ratio of conductivity of the sample A to B is
A
3
B
1/3
C
2/3
D
3/2
3
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
The Zener diode in the regulator circuit shown in figure has a Zener voltage of 5.8 Volts and a Zener knee current of 0.5 mA. The maximum load current drawn from this circuit ensuring proper functioning over the input voltage range between 20 and 30 Volts, is GATE ECE 2005 Electronic Devices and VLSI - PN Junction Question 12 English
A
23.7 mA
B
14.2 mA
C
13.7 mA
D
24.2 mA
4
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
A Silicon PN junction diode under reverse bias has depletion region of width 10 µm. The relative permittivity of Silicon, ɛr = 11.7 and the permittivity of free space ɛ0 = 8.854 × 10-12 F/m.The depletion capacitance of the diode per square meter is
A
100 μF
B
10 μF
C
1 μF
D
20 μF
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