1
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$ GATE ECE 2005 Analog Circuits - FET and MOSFET Question 19 English

ID and VDS under DC conditions are respectively

A
5.625 mA and 8.75 V
B
7.500 mA and 5.00V
C
4.500 mA and 11.00V
D
6.250 mA and 7.50V
2
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
For an n-channel MOSFET and its transfer curve shown in the figure, the threshold voltage is GATE ECE 2005 Analog Circuits - FET and MOSFET Question 17 English 1 GATE ECE 2005 Analog Circuits - FET and MOSFET Question 17 English 2
A
1 V and the device is in active region
B
-1 V and the device is in saturation region.
C
1 V and the device is in saturation region.
D
-1 V and the device is in active region.
3
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
For an npn transistor connected as shown in the figure, VBE = 0.7 volts. Given that reverse saturation current of the junction at room temperature $${300^0}$$ K is $${10^{ - 13}}\,{\rm A}$$, the emitter current is $$\left( {\eta \, = \,1} \right)$$ GATE ECE 2005 Analog Circuits - Bipolar Junction Transistor Question 40 English
A
30 mA
B
39 mA
C
49 mA
D
20 mA
4
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
The circuit using a BJT with β = 50 and VBE = 0.7 V is shown in the figure. The base current IB and collector voltage VC are respectively GATE ECE 2005 Analog Circuits - Bipolar Junction Transistor Question 39 English
A
43 μA and 11.4 Volts
B
40 μA and 16 Volts
C
45 μA and 11 Volts
D
50 μA and 10 Volts
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