GATE ECE 2005 | GATE ECE Year Wise Previous Years Questions

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GATE ECE 2005

MCQ (Single Correct Answer)

-0.3

The primary reason for the widespread use of Silicon in semiconductor device technology is

abundance of Silicon on the surface of the Earth.

larger bandgap of Silicon in comparison to Germanium.

favorable properties of Silicon-dioxide (SiO₂)

lower melting point

GATE ECE 2005

MCQ (Single Correct Answer)

-0.6

A silicon sample 'A' is doped with 10¹⁸ atoms/cm³ of Boron. Another sample 'B' of identical dimensions is doped with 10¹⁸ atoms/cm³ of Phosphorus. The ratio of electron to hole mobility is 1/3. The ratio of conductivity of the sample A to B is

1/3

2/3

3/2

GATE ECE 2005

MCQ (Single Correct Answer)

-0.3

A MOS capacitor made using p-type substrate is in the accumulation mode. The dominant charge in the channel is due to the presence of

holes

electrons

positively charged ions

negatively charged ions

GATE ECE 2005

MCQ (Single Correct Answer)

-0.6

The Dirac delta Function $$\delta \left( t \right)$$ is defined as

$$\delta \left( t \right) = \left\{ {\matrix{ 1 & {t = 0} \cr {0\,{\,^,}} & {otherwise} \cr } } \right.$$

$$\delta \left( t \right) = \left\{ {\matrix{ \infty & {t = 0} \cr {0\,\,,} & {otherwise} \cr } } \right.$$

$$\delta \left( t \right) = \left\{ {\matrix{ 1 & {t = 0} \cr {0\,\,,} & {otherwise} \cr } } \right.$$ and $$\int\limits_{ - \infty }^\infty {\delta \left( t \right)\,dt = 1} $$

$$\delta \left( t \right) = \left\{ {\matrix{ \infty & {t = 0} \cr {0\,\,,} & {otherwise} \cr } } \right.$$ and $$\int\limits_{ - \infty }^\infty {\delta \left( t \right)\,dt = 1} $$

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