The primary reason for the widespread use of Silicon in semiconductor device technology is

A Silicon PN junction at a temperature of 20°C has a reverse saturation current of 10 pico-Amperes (pA). The reverse saturation current at 40°C for the same bias is approximately

The band gap of Silicon at room temperature is:

A silicon sample 'A' is doped with 10¹⁸ atoms/cm³ of Boron. Another sample 'B' of identical dimensions is doped with 10¹⁸ atoms/cm³ of Phosphorus. The ratio of electron to hole mobility is 1/3. The ratio of conductivity of the sample A to B is