GATE ECE 2005 | GATE ECE Year Wise Previous Years Questions

GATE ECE 2005

MCQ (Single Correct Answer)

-0.6

The circuit using a BJT with β = 50 and V_BE = 0.7 V is shown in the figure. The base current I_B and collector voltage V_C are respectively GATE ECE 2005 Analog Circuits - Bipolar Junction Transistor Question 35 English

GATE ECE 2005 Analog Circuits - Bipolar Junction Transistor Question 35 English

43 μA and 11.4 Volts

40 μA and 16 Volts

45 μA and 11 Volts

50 μA and 10 Volts

GATE ECE 2005

MCQ (Single Correct Answer)

-0.6

For an npn transistor connected as shown in the figure, V_BE = 0.7 volts. Given that reverse saturation current of the junction at room temperature $${300^0}$$ K is $${10^{ - 13}}\,{\rm A}$$, the emitter current is $$\left( {\eta \, = \,1} \right)$$ GATE ECE 2005 Analog Circuits - Bipolar Junction Transistor Question 36 English

GATE ECE 2005 Analog Circuits - Bipolar Junction Transistor Question 36 English

30 mA

39 mA

49 mA

20 mA

GATE ECE 2005

MCQ (Single Correct Answer)

-0.6

Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$ GATE ECE 2005 Analog Circuits - FET and MOSFET Question 14 English

Z_i and Z_o of the circuit are respectively

2 $$M\Omega $$ and 2 $$K\Omega $$

2 $$M\Omega $$ and 20/11 $$K\Omega $$

infinity and 2 $$M\Omega $$

infinity and 20/11$$M\Omega $$

GATE ECE 2005

MCQ (Single Correct Answer)

-0.6

Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$ GATE ECE 2005 Analog Circuits - FET and MOSFET Question 12 English

Transconductance in milli-Siemens (mS) and voltage gain of the amplifier are respectively.

1.875 mS and 3.41

1.875 mS and -3.41

3.3 mS and -6

3.3 mS and 6

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