A Silicon PN junction diode under reverse bias has depletion region of width 10 µm. The relative permittivity of Silicon, ɛ_r = 11.7 and the permittivity of free space ɛ₀ = 8.854 × 10^-12 F/m.The depletion capacitance of the diode per square meter is

A MOS capacitor made using p-type substrate is in the accumulation mode. The dominant charge in the channel is due to the presence of

Given the matrix $$\left[ {\matrix{ { - 4} & 2 \cr 4 & 3 \cr } } \right],$$ the eigen vector is

Given an orthogonal matrix $$A = \left[ {\matrix{ 1 & 1 & 1 & 1 \cr 1 & 1 & { - 1} & { - 1} \cr 1 & { - 1} & 0 & 0 \cr 0 & 0 & 1 & { - 1} \cr } } \right]$$ then the value of $${\left( {A{A^T}} \right)^{ - 1}}$$ is