1
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
A silicon sample 'A' is doped with 1018 atoms/cm3 of Boron. Another sample 'B' of
identical dimensions is doped with 1018 atoms/cm3 of Phosphorus. The ratio of
electron to hole mobility is 1/3. The ratio of conductivity of the sample A to B is
2
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
A Silicon PN junction diode under reverse bias has depletion region of width 10
µm. The relative permittivity of Silicon, ɛr = 11.7 and the permittivity of free space ɛ0 = 8.854 × 10-12 F/m.The depletion capacitance of the diode per square meter is
3
GATE ECE 2005
MCQ (Single Correct Answer)
+2
-0.6
The Zener diode in the regulator circuit shown in figure has a Zener voltage of
5.8 Volts and a Zener knee current of 0.5 mA. The maximum load current drawn
from this circuit ensuring proper functioning over the input voltage range
between 20 and 30 Volts, is
4
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
A MOS capacitor made using p-type substrate is in the accumulation mode. The
dominant charge in the channel is due to the presence of
Paper analysis
Total Questions
Analog Circuits
13
Communications
8
Control Systems
10
Digital Circuits
7
Electromagnetics
8
Electronic Devices and VLSI
7
Engineering Mathematics
11
Microprocessors
3
Network Theory
10
Signals and Systems
14
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