Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$

Transconductance in milli-Siemens (mS) and voltage gain of the amplifier are respectively.

Given
$${r_d} = 20K\Omega ,\,\,{I_{DSS}}\, = \,10mA,\,\,{V_P} = - 8V$$

Z_i and Z_o of the circuit are respectively

For an npn transistor connected as shown in the figure, V_BE = 0.7 volts. Given that reverse saturation current of the junction at room temperature $${300^0}$$ K is $${10^{ - 13}}\,{\rm A}$$, the emitter current is $$\left( {\eta \, = \,1} \right)$$

The circuit using a BJT with β = 50 and V_BE = 0.7 V is shown in the figure. The base current I_B and collector voltage V_C are respectively