A MOS capacitor made using p-type substrate is in the accumulation mode. The dominant charge in the channel is due to the presence of

The band gap of Silicon at room temperature is:

A Silicon PN junction at a temperature of 20°C has a reverse saturation current of 10 pico-Amperes (pA). The reverse saturation current at 40°C for the same bias is approximately

The primary reason for the widespread use of Silicon in semiconductor device technology is