GATE ECE 2008 | GATE ECE Year Wise Previous Years Questions

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GATE ECE 2008

MCQ (Single Correct Answer)

-0.3

For a Hertz dipole antenna, the half power beam width (HPBW) in the E-plane is

$${360^ \circ }$$

$${180^ \circ }$$

$${90^ \circ }$$

$${45^ \circ }$$

GATE ECE 2008

MCQ (Single Correct Answer)

-0.6

At 20 GHz, the gain of a parabolic dish antenna of 1 meter diameter and 70% efficiency is

15 dB

25 dB

35 dB

45 dB

GATE ECE 2008

MCQ (Single Correct Answer)

-0.3

Which of the following is true?

A silicon wafer heavily doped with boron is a p⁺ substrate

A silicon wafer lightly doped with boron is a p⁺ substrate

A silicon wafer heavily doped with arsenic is a p⁺ substrate

A silicon wafer lightly doped with arsenic is a p⁺ substrate

GATE ECE 2008

MCQ (Single Correct Answer)

-0.3

In the following limiter circuit, an input voltage $${\mathrm V}_\mathrm i\;=\;10\sin\left(100\mathrm{πt}\right)$$ applied. Assume that the diode drop is 0.7V when it is forward biased. The Zener breakdown voltage is 6.8V. GATE ECE 2008 Electronic Devices and VLSI - PN Junction Question 25 English

GATE ECE 2008 Electronic Devices and VLSI - PN Junction Question 25 English

The maximum and minimum values of the output voltage respectively are

6.1V, − 0.7V

0.7V, − 7.5V

7.5V, − 0.7V

7.5V, − 7.5V

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