1
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
Which of the following is NOT associated with a P-N junction?
A
Junction capacitance
B
Charge Storage Capacitance
C
Depletion Capacitance
D
Channel Length Modulation
2
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
In the following limiter circuit, an input voltage $${\mathrm V}_\mathrm i\;=\;10\sin\left(100\mathrm{πt}\right)$$ applied. Assume that the diode drop is 0.7V when it is forward biased. The Zener breakdown voltage is 6.8V. GATE ECE 2008 Electronic Devices and VLSI - PN Junction Question 25 English

The maximum and minimum values of the output voltage respectively are

A
6.1V, − 0.7V
B
0.7V, − 7.5V
C
7.5V, − 0.7V
D
7.5V, − 7.5V
3
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K' is a constant. The magnitude of the transconductance gm is
A
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{DS}}$$
B
$$2K\left(V_{GS}\;-\;V_T\right)$$
C
$$\frac{I_d}{V_{GS}\;-\;V_{DS}}$$
D
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{GS}}$$
4
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate
A
is independent of current oxide thickness and temperature
B
is independent of current oxide thickness but depends on temperature
C
slows down as the oxide grows
D
is zero as the existing oxide prevents further oxidation
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