GATE ECE 2008 | GATE ECE Year Wise Previous Years Questions

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GATE ECE 2008

MCQ (Single Correct Answer)

-0.3

Which of the following is true?

A silicon wafer heavily doped with boron is a p⁺ substrate

A silicon wafer lightly doped with boron is a p⁺ substrate

A silicon wafer heavily doped with arsenic is a p⁺ substrate

A silicon wafer lightly doped with arsenic is a p⁺ substrate

GATE ECE 2008

MCQ (Single Correct Answer)

-0.3

In the following limiter circuit, an input voltage $${\mathrm V}_\mathrm i\;=\;10\sin\left(100\mathrm{πt}\right)$$ applied. Assume that the diode drop is 0.7V when it is forward biased. The Zener breakdown voltage is 6.8V. GATE ECE 2008 Electronic Devices and VLSI - PN Junction Question 25 English

GATE ECE 2008 Electronic Devices and VLSI - PN Junction Question 25 English

The maximum and minimum values of the output voltage respectively are

6.1V, − 0.7V

0.7V, − 7.5V

7.5V, − 0.7V

7.5V, − 7.5V

GATE ECE 2008

MCQ (Single Correct Answer)

-0.3

Which of the following is NOT associated with a P-N junction?

Junction capacitance

Charge Storage Capacitance

Depletion Capacitance

Channel Length Modulation

GATE ECE 2008

MCQ (Single Correct Answer)

-0.3

A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate

is independent of current oxide thickness and temperature

is independent of current oxide thickness but depends on temperature

slows down as the oxide grows

is zero as the existing oxide prevents further oxidation

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