GATE ECE 2008 | GATE ECE Year Wise Previous Years Questions

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GATE ECE 2008

MCQ (Single Correct Answer)

-0.3

Which of the following is true?

A silicon wafer heavily doped with boron is a p⁺ substrate

A silicon wafer lightly doped with boron is a p⁺ substrate

A silicon wafer heavily doped with arsenic is a p⁺ substrate

A silicon wafer lightly doped with arsenic is a p⁺ substrate

GATE ECE 2008

MCQ (Single Correct Answer)

-0.3

The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K' is a constant. The magnitude of the transconductance g_m is

$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{DS}}$$

$$2K\left(V_{GS}\;-\;V_T\right)$$

$$\frac{I_d}{V_{GS}\;-\;V_{DS}}$$

$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{GS}}$$

GATE ECE 2008

MCQ (Single Correct Answer)

-0.3

Which of the following is NOT associated with a P-N junction?

Junction capacitance

Charge Storage Capacitance

Depletion Capacitance

Channel Length Modulation

GATE ECE 2008

MCQ (Single Correct Answer)

-0.3

In the following limiter circuit, an input voltage $${\mathrm V}_\mathrm i\;=\;10\sin\left(100\mathrm{πt}\right)$$ applied. Assume that the diode drop is 0.7V when it is forward biased. The Zener breakdown voltage is 6.8V. GATE ECE 2008 Electronic Devices and VLSI - PN Junction Question 34 English

GATE ECE 2008 Electronic Devices and VLSI - PN Junction Question 34 English

The maximum and minimum values of the output voltage respectively are

6.1V, − 0.7V

0.7V, − 7.5V

7.5V, − 0.7V

7.5V, − 7.5V

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