1
GATE ECE 2008
MCQ (Single Correct Answer)
+2
-0.6
The value of the integral of the function $$\mathrm g\left(\mathrm x,\mathrm y\right)=4\mathrm x^3\;+\;10\mathrm y^4$$ along the straight line segment from the point (0, 0) to the point (1, 2) in the x-y plane is
A
33
B
35
C
40
D
56
2
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
Which of the following is true?
A
A silicon wafer heavily doped with boron is a p+ substrate
B
A silicon wafer lightly doped with boron is a p+ substrate
C
A silicon wafer heavily doped with arsenic is a p+ substrate
D
A silicon wafer lightly doped with arsenic is a p+ substrate
3
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K' is a constant. The magnitude of the transconductance gm is
A
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{DS}}$$
B
$$2K\left(V_{GS}\;-\;V_T\right)$$
C
$$\frac{I_d}{V_{GS}\;-\;V_{DS}}$$
D
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{GS}}$$
4
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate
A
is independent of current oxide thickness and temperature
B
is independent of current oxide thickness but depends on temperature
C
slows down as the oxide grows
D
is zero as the existing oxide prevents further oxidation
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