1
GATE ECE 2008
MCQ (Single Correct Answer)
+2
-0.6
A uniform plane wave in the free space is normally incident on an infinitely thick dielectric slab (dielectric constant $${\varepsilon _r} = 9$$ ). The magnitude of the reflection coefficient is
A
$$0$$
B
$$0.3$$
C
$$0.5$$
D
$$0.8$$
2
GATE ECE 2008
MCQ (Single Correct Answer)
+2
-0.6
The value of the integral of the function $$\mathrm g\left(\mathrm x,\mathrm y\right)=4\mathrm x^3\;+\;10\mathrm y^4$$ along the straight line segment from the point (0, 0) to the point (1, 2) in the x-y plane is
A
33
B
35
C
40
D
56
3
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
Which of the following is true?
A
A silicon wafer heavily doped with boron is a p+ substrate
B
A silicon wafer lightly doped with boron is a p+ substrate
C
A silicon wafer heavily doped with arsenic is a p+ substrate
D
A silicon wafer lightly doped with arsenic is a p+ substrate
4
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
The drain current of a MOSFET in saturation is given by $$I_D\;=\;K\left(V_{GS}\;-V_T\right)^2$$ where 'K' is a constant. The magnitude of the transconductance gm is
A
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{DS}}$$
B
$$2K\left(V_{GS}\;-\;V_T\right)$$
C
$$\frac{I_d}{V_{GS}\;-\;V_{DS}}$$
D
$$\frac{K\left(V_{GS}\;-\;V_T\right)^2}{V_{GS}}$$
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