In the following limiter circuit, an input voltage $${\mathrm V}_\mathrm i\;=\;10\sin\left(100\mathrm{πt}\right)$$ applied. Assume that the diode drop is 0.7V when it is forward biased. The Zener breakdown voltage is 6.8V.

The maximum and minimum values of the output voltage respectively are

Two identical NMOS transistors M₁ and M₂ are connected as shown below. V_bias is chosen so that both transistors are in saturation. The equivalent g_m of the pair is defined to be $$\frac{\partial I_{out}}{\partial v_i}$$ at constant V_out. The equivalent g_m of the pair is

For the circuit shown in the following figure, transistors M1 and M2 are identical NMOS transistors. Assume that M2 is in saturation and the output is unloaded The current I_x is related to I_bias as

A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate