1
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate
A
is independent of current oxide thickness and temperature
B
is independent of current oxide thickness but depends on temperature
C
slows down as the oxide grows
D
is zero as the existing oxide prevents further oxidation
2
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
Which of the following is NOT associated with a P-N junction?
A
Junction capacitance
B
Charge Storage Capacitance
C
Depletion Capacitance
D
Channel Length Modulation
3
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
In the following limiter circuit, an input voltage $${\mathrm V}_\mathrm i\;=\;10\sin\left(100\mathrm{πt}\right)$$ applied. Assume that the diode drop is 0.7V when it is forward biased. The Zener breakdown voltage is 6.8V. GATE ECE 2008 Electronic Devices and VLSI - PN Junction Question 26 English

The maximum and minimum values of the output voltage respectively are

A
6.1V, − 0.7V
B
0.7V, − 7.5V
C
7.5V, − 0.7V
D
7.5V, − 7.5V
4
GATE ECE 2008
MCQ (Single Correct Answer)
+2
-0.6
Two identical NMOS transistors M1 and M2 are connected as shown below. Vbias is chosen so that both transistors are in saturation. The equivalent gm of the pair is defined to be $$\frac{\partial I_{out}}{\partial v_i}$$ at constant Vout. The equivalent gm of the pair is GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 34 English
A
The sum of individual gm’s of the transistors
B
The product of individual gm’s of the transistors
C
Nearly equal to the gm of M1
D
Nearly equal to gm/g0 of M2
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