1
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
A silicon wafer has 100 mm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate
A
is independent of current oxide thickness and temperature
B
is independent of current oxide thickness but depends on temperature
C
slows down as the oxide grows
D
is zero as the existing oxide prevents further oxidation
2
GATE ECE 2008
MCQ (Single Correct Answer)
+2
-0.6
The measured transconductance gm of an NMOS transistor operating in the linear region is plotted against the gate voltage VG at constant drain voltage VD. Which of the following figures represents the expected dependence of gm on VG?
A
GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 33 English Option 1
B
GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 33 English Option 2
C
GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 33 English Option 3
D
GATE ECE 2008 Electronic Devices and VLSI - IC Basics and MOSFET Question 33 English Option 4
3
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
The system of linear equations $$\left. {\matrix{ {4x + 2y = 7} \cr {2x + y = 6} \cr } } \right\}$$ has
A
a unique solution
B
no solution
C
an infinite no. of solutions
D
exactly two distinct solution.
4
GATE ECE 2008
MCQ (Single Correct Answer)
+1
-0.3
The equation sin(z) = 10 has
A
no real (or) complex solution
B
exactly two distinct complex solutions
C
a unique solution
D
an infinite no of complex solutions