1
GATE ECE 2022
MCQ (Single Correct Answer)
+1
-0.33
The ideal long channel nMOSFET and pMOSFET devices shown in the circuits have threshold voltages of 1 V and $$-$$1 V, respectively. The MOSFET substrates are connected to their respectively sources. Ignore leakage currents and assume that the capacitors are initially discharged. For the applied voltages as shown, the steady state voltages are ____________.
2
GATE ECE 1998
MCQ (Single Correct Answer)
+1
-0.3
In the MOSFET amplifier of the figure the signal output V1 and V2 obey the relationship
3
GATE ECE 1995
Fill in the Blanks
+1
-0
An n-channel JFET has IDSS = 1 mA and Vp = -5 V. Its maximum transconductance is ______
4
GATE ECE 1994
Fill in the Blanks
+1
-0
The transit time of a current carriers through the channel of an FET decides its ____________characteristics.
Questions Asked from FET and MOSFET (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE ECE Subjects
Network Theory
Control Systems
Electronic Devices and VLSI
Analog Circuits
Digital Circuits
Microprocessors
Signals and Systems
Representation of Continuous Time Signal Fourier Series Discrete Time Signal Fourier Series Fourier Transform Discrete Time Signal Z Transform Continuous Time Linear Invariant System Transmission of Signal Through Continuous Time LTI Systems Discrete Time Linear Time Invariant Systems Sampling Continuous Time Signal Laplace Transform Discrete Fourier Transform and Fast Fourier Transform Transmission of Signal Through Discrete Time Lti Systems Miscellaneous Fourier Transform
Communications
Electromagnetics
General Aptitude