1
GATE ECE 2022
+1
-0.33

The ideal long channel nMOSFET and pMOSFET devices shown in the circuits have threshold voltages of 1 V and $$-$$1 V, respectively. The MOSFET substrates are connected to their respectively sources. Ignore leakage currents and assume that the capacitors are initially discharged. For the applied voltages as shown, the steady state voltages are ____________.

A
V1 = 5 V, V2 = 5 V
B
V1 = 5 V, V2 = 4 V
C
V1 = 4 V, V2 = 5 V
D
V1 = 4 V, V2 = $$-$$5 V
2
GATE ECE 2022
+1
-0.33

Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 $$\mu$$m and width 100 $$\mu$$m. The product of electron mobility ($$\mu$$n) and oxide capacitance per unit area (Cox) is $$\mu$$nCox = 1 mA/V2. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage VGS = [2 $$-$$ sin(2t)] V and drain-to source voltage VDS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current is ___________.

A
40 mA
B
20 mA
C
15 mA
D
5 mA
3
GATE ECE 2022
Numerical
+1
-0.33

Consider the circuit shown with an ideal long channel nMOSFET (enhancement mode, substrate is connected to the source). The transistor is appropriately biased in the saturation region with VGG and VDD such that it acts as a linear amplifier. vi is the small-signal ac input voltage. vA and vB represent the small-signal voltages at the nodes A and B, respectively. The value of $${{{v_A}} \over {{v_B}}}$$ is __________ (rounded off to one decimal place).

4
GATE ECE 1998
+1
-0.3
In the MOSFET amplifier of the figure the signal output V1 and V2 obey the relationship
A
$${V_1} = {{{V_2}} \over 2}$$
B
$${V_1} =- {{{V_2}} \over 2}$$
C
$${V_1} = 2{V_2}$$
D
$${V_1} =- 2{V_2}$$
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