The ideal long channel nMOSFET and pMOSFET devices shown in the circuits have threshold voltages of 1 V and $$-$$1 V, respectively. The MOSFET substrates are connected to their respectively sources. Ignore leakage currents and assume that the capacitors are initially discharged. For the applied voltages as shown, the steady state voltages are ____________.

For the transistor $M_1$ in the circuit shown in the figure, $\mu_n C_{o x}=100 \mu \mathrm{~A} / V^2$ and $\frac{W}{L}=10$, where $\mu_n$ is the mobility of electron, $C_{o x}$ is the oxide capacitance per unit area. $W$ is the width and $L$ is the length.

The channel length modulation coefficient is ignored. If the gate-to-source voltage $V_{G S}$ is 1 V to keep the transistor at the edge of saturation. Then the threshold voltage of the transistor (rounded off to one decimal place) is $\_\_\_\_$ V.

In the circuit shown in the figure, the transistors $M_1$ and $M_2$ are operating in saturation. The channel length

modulation coefficients of both the transistors are non-zero. The transconductance of the MOSFETs $M_1$ and $M_2$ are $g_{m 1}$ and $g_{m 2}$, respectively, and the internal resistance of the MOSFETs $M_1$ and $M_2$ are $r_{01}$ and $r_{02}$ respectively.

Ignoring the body effect, the ac small signal voltage gain ( $d V_{\text {out }} / d V_{\text {in }}$ ) of the circuit is

In the MOSFET amplifier of the figure the signal output V₁ and V₂ obey the relationship