In the circuit below, assume that the long channel NMOS transistor is biased in saturation. The small signal trans-conductance of the transistor is $g_m$. Neglect body effect, channel length modulation, and intrinsic device capacitances. The small signal input impedance $Z_{in}(j\omega)$ is _______
In the circuit shown below, $$V_1$$ and $$V_2$$ are bias voltages. Based on input and output impedances, the circuit behaves as a
Consider the CMOS circuit shown in the figure (substrates are connected to their respective sources). The gate width (W) to gate length (L) ratios $$\left( {{W \over L}} \right)$$ of the transistors are as shown. Both the transistors have the same gate oxide capacitance per unit area. For the pMOSFET, the threshold voltage is $$-$$1 V and the mobility of holes is $$40{{c{m^2}} \over {V.s}}$$. For the nMOSFET, the threshold voltage is 1 V and the mobility of electrons is $$300{{c{m^2}} \over {V.s}}$$. The steady state output voltage V0 is ___________.
The ideal long channel nMOSFET and pMOSFET devices shown in the circuits have threshold voltages of 1 V and $$-$$1 V, respectively. The MOSFET substrates are connected to their respectively sources. Ignore leakage currents and assume that the capacitors are initially discharged. For the applied voltages as shown, the steady state voltages are ____________.
