1
GATE ECE 2024
MCQ (Single Correct Answer)
+1
-0.33

In the circuit below, assume that the long channel NMOS transistor is biased in saturation. The small signal trans-conductance of the transistor is $g_m$. Neglect body effect, channel length modulation, and intrinsic device capacitances. The small signal input impedance $Z_{in}(j\omega)$ is _______

GATE ECE 2024 Analog Circuits - FET and MOSFET Question 3 English
A

$\frac{-g_m}{{C_1C_L \omega^2}} + \frac{1}{{j\omega C_1}} + \frac{1}{{j\omega C_L}}$

B

$\frac{g_m}{{C_1C_L \omega^2}} + \frac{1}{{j\omega C_1}} + \frac{1}{{j\omega C_L}}$

C

$\frac{1}{{j\omega C_1}} + \frac{1}{{j\omega C_L}}$

D

$\frac{-g_m}{{C_1C_L \omega^2}} + \frac{1}{{j\omega C_1} + j\omega C_L}$

2
GATE ECE 2023
MCQ (Single Correct Answer)
+1
-0.33

In the circuit shown below, $$V_1$$ and $$V_2$$ are bias voltages. Based on input and output impedances, the circuit behaves as a

GATE ECE 2023 Analog Circuits - FET and MOSFET Question 4 English

A
voltage controlled voltage source.
B
voltage controlled current source.
C
current controlled voltage source.
D
current controlled current source.
3
GATE ECE 2022
MCQ (Single Correct Answer)
+1
-0.33

Consider the CMOS circuit shown in the figure (substrates are connected to their respective sources). The gate width (W) to gate length (L) ratios $$\left( {{W \over L}} \right)$$ of the transistors are as shown. Both the transistors have the same gate oxide capacitance per unit area. For the pMOSFET, the threshold voltage is $$-$$1 V and the mobility of holes is $$40{{c{m^2}} \over {V.s}}$$. For the nMOSFET, the threshold voltage is 1 V and the mobility of electrons is $$300{{c{m^2}} \over {V.s}}$$. The steady state output voltage V0 is ___________.

GATE ECE 2022 Analog Circuits - FET and MOSFET Question 5 English

A
equal to 0 V
B
more than 2 V
C
less than 2 V
D
equal to 2 V
4
GATE ECE 2022
MCQ (Single Correct Answer)
+1
-0.33

The ideal long channel nMOSFET and pMOSFET devices shown in the circuits have threshold voltages of 1 V and $$-$$1 V, respectively. The MOSFET substrates are connected to their respectively sources. Ignore leakage currents and assume that the capacitors are initially discharged. For the applied voltages as shown, the steady state voltages are ____________.

GATE ECE 2022 Analog Circuits - FET and MOSFET Question 8 English

A
V1 = 5 V, V2 = 5 V
B
V1 = 5 V, V2 = 4 V
C
V1 = 4 V, V2 = 5 V
D
V1 = 4 V, V2 = $$-$$5 V
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