1
GATE ECE 2010
MCQ (Single Correct Answer)
+1
-0.3
In the silicon BJT circuit shown below, assume that the emitter area of transistor Q1 is half that of transistor Q2.The value of current I0 is approximately GATE ECE 2010 Analog Circuits - Bipolar Junction Transistor Question 55 English
A
0.5 mA
B
2 mA
C
9.3 mA
D
15 mA
2
GATE ECE 2010
MCQ (Single Correct Answer)
+1
-0.3
The amplifier circuit shown below uses a silicon transistor. The capacitors CC and CE can be assumed to be short at signal frequency and the effect of output resistance r0 can be ignored. If CE is disconnected from the circuit, which one of the following statements is TRUE? GATE ECE 2010 Analog Circuits - Bipolar Junction Transistor Question 54 English
A
The input resistance Ri increases and the magnitude of voltage gain AV decreases
B
The input resistance Ri decreases and the magnitude of voltage gain AV decreases
C
Both input resistance Ri and the magnitude of voltage gain AV decrease
D
Both input resistance Ri and the magnitude of voltage gain AV increase
3
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
The input impedance (Zi) and the output impedance (Zo) of an ideal transconductance (voltage controlled current source) amplifier are
A
Zi = 0, Zo = 0
B
Zi = 0, Zo = $$\infty$$
C
Zi = $$\infty$$, Zo = 0
D
Zi = $$\infty$$, Zo = $$\infty$$
4
GATE ECE 2005
MCQ (Single Correct Answer)
+1
-0.3
The cascode amplifier is a multistage configuration of
A
CC-CB
B
CE-CB
C
CB-CC
D
CE-CC
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