1
GATE ECE 2007
MCQ (Single Correct Answer)
+2
-0.6
The $$\mathop E\limits^ \to $$ field in a rectangular waveguide of inner dimensions $$a\,\, \times \,\,b$$ is given by $$\mathop E\limits^ \to = {{\omega \,\mu } \over {{h^2}}}\,\left( {{\pi \over a}} \right)\,{H_0}\,\sin \,\left( {{{2\,\pi \,x} \over a}} \right)\,\,\sin \,(\omega \,t - \,\beta \,z)\hat y$$,

where $${H_0}$$ is a constant, a and b are the dimensions along the x-axis and the y-axis respectively. The mode of propagation in the waveguide is

A
$$T{E_{20}}$$
B
$$T{M_{11}}$$
C
$$T{M_{20}}$$
D
$$T{E_{10}}$$
2
GATE ECE 2007
MCQ (Single Correct Answer)
+2
-0.6
A $$\lambda /2$$ dipole is kept horizontally at a height of $${\lambda _0}/2$$ above a perfectly conducting infinite ground plane. The radiation pattern in the plane of the dipole ($$\overrightarrow E $$ plane) looks approximately as
A
GATE ECE 2007 Electromagnetics - Antennas Question 35 English Option 1
B
GATE ECE 2007 Electromagnetics - Antennas Question 35 English Option 2
C
GATE ECE 2007 Electromagnetics - Antennas Question 35 English Option 3
D
GATE ECE 2007 Electromagnetics - Antennas Question 35 English Option 4
3
GATE ECE 2007
MCQ (Single Correct Answer)
+1
-0.3
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A
the edge of the depletion region on the p-side
B
the edge of the depletion region on the n-side
C
the p+n junction
D
the center of the depletion region on the n-side
4
GATE ECE 2007
MCQ (Single Correct Answer)
+2
-0.6
A P+-N junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2 µm. For a reverse bias of 7.2 V, the depletion layer width will be:
A
4 µm
B
4.9 µm
C
8 µm
D
12 µm
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