The parallel branches of a 2-wire transmission line are terminated in 100 $$\Omega $$ and 200 $$\Omega $$ resistors as shown in the Fig. The characteristic impedance of the line is $$Z_0$$ = 50 $$\Omega $$ and each section has a length of $$\lambda /4$$. The voltage reflection coefficient $$\Gamma $$ at the input is:

In the CMOS inverter circuit shown, if the transconductance parameters of the NMOS and PMOS transistors are
K_n = K_p = μ_nC_OX$$\frac{W_n}{L_n}$$ = μ_pC_OX$$\frac{W_P}{L_P}$$= 40 μA/V² and their threshold voltages are V_T = 1 V, the current I is:

The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is:

A P⁺-N junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2 µm. For a reverse bias of 7.2 V, the depletion layer width will be: