The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is:

A P⁺-N junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2 µm. For a reverse bias of 7.2 V, the depletion layer width will be:

In a p⁺n junction diode under reverse bias, the magnitude of electric field is maximum at

For the function $${e^{ - x}},$$ the linear approximation around $$x=2$$ is