1
GATE ECE 2007
MCQ (Single Correct Answer)
+2
-0.6
A P+-N junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2 µm. For a reverse bias of 7.2 V, the depletion layer width will be:
A
4 µm
B
4.9 µm
C
8 µm
D
12 µm
2
GATE ECE 2007
MCQ (Single Correct Answer)
+1
-0.3
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A
the edge of the depletion region on the p-side
B
the edge of the depletion region on the n-side
C
the p+n junction
D
the center of the depletion region on the n-side
3
GATE ECE 2007
MCQ (Single Correct Answer)
+1
-0.3
The following plot shows a function $$y$$ which varies linearly with $$x$$. The value of the integral $$\,\,{\rm I} = \int\limits_1^2 {y\,dx\,\,} $$ GATE ECE 2007 Engineering Mathematics - Calculus Question 46 English
A
$$1$$
B
$$2.5$$
C
$$4$$
D
$$5$$
4
GATE ECE 2007
MCQ (Single Correct Answer)
+2
-0.6
If the semi-circular contour D of radius 2 is as shown in the figure, then the value of the integral $$\oint\limits_D {{1 \over {{s^2} - 1}}} ds$$ is GATE ECE 2007 Engineering Mathematics - Complex Variable Question 25 English
A
$$i\pi $$
B
$$ - i\pi $$
C
$$ - \pi $$
D
$$ \pi $$
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