1
GATE ECE 2007
MCQ (Single Correct Answer)
+2
-0.6
A P+-N junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2 µm. For a reverse bias of 7.2 V, the depletion layer width will be:
A
4 µm
B
4.9 µm
C
8 µm
D
12 µm
2
GATE ECE 2007
MCQ (Single Correct Answer)
+2
-0.6
The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is:
A
0.980
B
0.985
C
0.990
D
0.995
3
GATE ECE 2007
MCQ (Single Correct Answer)
+2
-0.6
In the CMOS inverter circuit shown, if the transconductance parameters of the NMOS and PMOS transistors are
Kn = Kp = μnCOX$$\frac{W_n}{L_n}$$ = μpCOX$$\frac{W_P}{L_P}$$= 40 μA/V2 and their threshold voltages are VT = 1 V, the current I is: GATE ECE 2007 Electronic Devices and VLSI - IC Basics and MOSFET Question 32 English
A
0 A
B
25 μA
C
45 μA
D
90 μA
4
GATE ECE 2007
MCQ (Single Correct Answer)
+1
-0.3
$$\mathop {Lim}\limits_{\theta \to 0} {{\sin \left( {\theta /2} \right)} \over \theta }\,\,\,$$ is
A
$$0.5$$
B
$$1$$
C
$$2$$
D
not defined
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