A P⁺-N junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2 µm. For a reverse bias of 7.2 V, the depletion layer width will be:

In a p⁺n junction diode under reverse bias, the magnitude of electric field is maximum at

For the function $${e^{ - x}},$$ the linear approximation around $$x=2$$ is

If the semi-circular contour D of radius 2 is as shown in the figure, then the value of the integral $$\oint\limits_D {{1 \over {{s^2} - 1}}} ds$$ is