1
GATE ECE 2004
MCQ (Single Correct Answer)
+1
-0.3
Consider a lossless antenna with a directive gain of + 6 dB. If 1 m W of power is fed to it the total power radiated by the antenna will be
A
4 m W
B
1 m W
C
7 m W
D
1/4 m W
2
GATE ECE 2004
MCQ (Single Correct Answer)
+1
-0.3
The impurity commonly used for realizing the base region of a silicon n-p-n transistor is
A
Gallium
B
Indium
C
Boron
D
Phosphorus
3
GATE ECE 2004
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements S1 and S2.


S1: The threshold voltage (VT) of a MOS capacitor decreases with increase in gate oxide thickness

S2: The threshold voltage (VT) of a MOS capacitor decreases with increase in substrate doping concentration.

Which one of the following is correct?
A
S1 is FALSE and S2 is TRUE
B
both S1 and S2 are TRUE
C
S1 is TRUE and S2 is FALSE
D
both S1 and S2 are FALSE
4
GATE ECE 2004
MCQ (Single Correct Answer)
+2
-0.6
The drain of an n-channel MOSFET is shorted to the gate so that VGS = VDS. The threshold voltage (VT) of MOSFET is 1 V. If the drain current (ID) is 1 mA for VGS = 2 V, then for VGS = 3 V, ID is
A
2 mA
B
3 mA
C
9 mA
D
4 mA
EXAM MAP
Medical
NEET
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
CBSE
Class 12