A lossless transmission line is terminated in a load which reflects a part of the incident power. The measured VSWR is 2. The percentage of the power that is reflected back is

The drain of an n-channel MOSFET is shorted to the gate so that V_GS = V_DS. The threshold voltage (V_T) of MOSFET is 1 V. If the drain current (I_D) is 1 mA for V_GS = 2 V, then for V_GS = 3 V, I_D is

Consider the following statements S1 and S2.

S1: The threshold voltage (V_T) of a MOS capacitor decreases with increase in gate oxide thickness

S2: The threshold voltage (V_T) of a MOS capacitor decreases with increase in substrate doping concentration.

Which one of the following is correct?

The impurity commonly used for realizing the base region of a silicon n-p-n transistor is