Consider a 300$$\Omega $$, quarter-wave long (at 1 GHz) transmission line as shown in Fig. It is connected to a 10V, 50$$\Omega $$ sources at one end and is left open circuited at the other end. The magnitude of the voltage at the open circuit end of the line is

The drain of an n-channel MOSFET is shorted to the gate so that V_GS = V_DS. The threshold voltage (V_T) of MOSFET is 1 V. If the drain current (I_D) is 1 mA for V_GS = 2 V, then for V_GS = 3 V, I_D is

Consider the following statements S1 and S2.

S1: The threshold voltage (V_T) of a MOS capacitor decreases with increase in gate oxide thickness

S2: The threshold voltage (V_T) of a MOS capacitor decreases with increase in substrate doping concentration.

Which one of the following is correct?

The impurity commonly used for realizing the base region of a silicon n-p-n transistor is