GATE ECE 2004 | GATE ECE Year Wise Previous Years Questions

GATE ECE 2004

MCQ (Single Correct Answer)

-0.6

The drain of an n-channel MOSFET is shorted to the gate so that V_GS = V_DS. The threshold voltage (V_T) of MOSFET is 1 V. If the drain current (I_D) is 1 mA for V_GS = 2 V, then for V_GS = 3 V, I_D is

2 mA

3 mA

9 mA

4 mA

GATE ECE 2004

MCQ (Single Correct Answer)

-0.3

Consider the following statements S1 and S2.

S1: The threshold voltage (V_T) of a MOS capacitor decreases with increase in gate oxide thickness

S2: The threshold voltage (V_T) of a MOS capacitor decreases with increase in substrate doping concentration.

Which one of the following is correct?

S1 is FALSE and S2 is TRUE

both S1 and S2 are TRUE

S1 is TRUE and S2 is FALSE

both S1 and S2 are FALSE

GATE ECE 2004

MCQ (Single Correct Answer)

-0.3

The impurity commonly used for realizing the base region of a silicon n-p-n transistor is

Gallium

Indium

Boron

Phosphorus

GATE ECE 2004

MCQ (Single Correct Answer)

-0.6

Consider the sequence of 8085 instructions given below.
LXI H, 9258
MOV A, M
CMA
MOV M, A
Which one of the following is performed by this sequence?

contents of location 9258 are moved to the accumulator.

contents of location 9258 are compared with the contents of the accumulator.

contents of location 9258 are complemented and stored in location 9258.

contents of location 5892 are complemented and stored in location 5892.

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