Consider the following statements S1 and S2.

S1: The threshold voltage (V_T) of a MOS capacitor decreases with increase in gate oxide thickness

S2: The threshold voltage (V_T) of a MOS capacitor decreases with increase in substrate doping concentration.

Which one of the following is correct?

The drain of an n-channel MOSFET is shorted to the gate so that V_GS = V_DS. The threshold voltage (V_T) of MOSFET is 1 V. If the drain current (I_D) is 1 mA for V_GS = 2 V, then for V_GS = 3 V, I_D is

The 8255 Programmable Peripheral Interface is used as described below.

I. An A/D converter is interfaced to a microprocessor through an 8255. the conversion is initiated by a signal from the 8255 on Port C. A signal on Port C causes data to be strobed into Port A.

II. Two computers exchange data using a pair of 8255s. Port A works as a bidirectional data port supported by appropriate handshaking signals.

The appropriate modes of operation of the 8255 for I and II would be

The number of memory cycles required to execute the following 8085 instructions
(I.) LDA 3000H
(II.) LXI D, FOF 1H
Would be