1
GATE EE 2021
Numerical
+1
-0

In the BJT circuit shown, beta of the PNP transistor is 100 . Assume $V_{B E}=-0.7 \mathrm{~V}$. The voltage across $R_C$ will be 5 V when $R_2$ is $\_\_\_\_$ $\mathrm{k} \Omega$. (Round off to 2 decimal places)

GATE EE 2021 Analog Electronics - Bjt and Mosfet Biasing Question 1 English

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2
GATE EE 2016 Set 1
Numerical
+1
-0
A transistor circuit is given below. The Zener diode breakdown voltage is $$5.3$$ $$V$$ as shown. Take base to emitter voltage drop to be $$0.6$$ V. The value of the current gain $$\beta $$ is ________. GATE EE 2016 Set 1 Analog Electronics - Bjt and Mosfet Biasing Question 26 English
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3
GATE EE 2015 Set 1
Numerical
+1
-0
In the given circuit, the silicon transistor has $$\beta $$ $$=75$$ and a collector voltage $${V_C} = 9\,V.$$ Then the ratio of $${R_B}$$ and $${R_C}$$ is ___________. GATE EE 2015 Set 1 Analog Electronics - Bjt and Mosfet Biasing Question 25 English
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4
GATE EE 2015 Set 2
MCQ (Single Correct Answer)
+1
-0.3
When a bipolar junction transistor is operating in the saturation mode, which one of the following statements is TRUE about the state of its collector-base (CB) and the base-emitter (BE) junctions?
A
The CB junction is forward biased and the BE junction is reverse biased.
B
The CB junction is reverse biased and the BE junction is forward biased.
C
Both the CB and BE junctions are forward biased.
D
Both the CB and BE junctions are reverse biased.

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