Power Semiconductor Devices · Power Electronics · GATE EE
Start PracticeMarks 1
GATE EE 2024
If the following switching devices have similar power ratings, which one of them is the fastest?
GATE EE 2023
A semiconductor switch needs to block voltage V of only one polarity (V > 0) during OFF state as shown in figure (i) and carry current in both dire...
GATE EE 2022
A charger supplies 100 W at 20 V for charging the battery of a laptop. The power devices, used in the converter inside the charger, operate at a switc...
GATE EE 2018
Four power semiconductor devices are shown in the figure along with their relevant
terminals. The device(s) that can carry dc current continuously in ...
GATE EE 2017 Set 1
For the power semiconductor devices $$IGBT, MOSFET,$$ Diode and Thyristor, which one of the following statements is TRUE?
GATE EE 2016 Set 1
A steady dc current of 100 A is flowing through a power module (S, D) as shown in Figure (a). The V-I characteristics of the IGBT (S) and the diode (D...
GATE EE 2014 Set 1
Figure shows four electronic switches $$(i), (ii), (iii)$$ and $$(iv).$$ Which of the switches can block voltages of either polarity (applied between ...
GATE EE 2012
The typical ratio of latching current to holding current in a $$20$$ $$A$$ thyristor is
GATE EE 2011
Circuit turn-off time of an $$SCR$$ is defined as the time
GATE EE 2010
Figure shows a composite switch consisting of a power transistor $$(BJT)$$ in series with a diode. Assuming that the transistor switch and the diode a...
GATE EE 2009
An $$SCR$$ is considered to be a semi - controlled device because
GATE EE 2005
The conduction loss versus device current characteristic of a power $$MOSFET$$ is best approximated by
GATE EE 2004
A bipolar junction transistor $$(BJT)$$ is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region ...
GATE EE 2004
The triggering circuit of a thyristor is shown in figure. The thyristor requires a gate current of $$10$$ $$mA,$$ for guaranteed turn-on. The value of...
GATE EE 2003
Figure shows a thyristor with the standard terminations of anode $$(A),$$ cathode $$(K),$$ gate $$(G)$$ and the different junctions named $$J1, J2,$$ ...
GATE EE 2003
Figure shows a $$MOSFET$$ with an integral body diode. It is employed as a power switching device in the ON and OFF states through appropriate control...
GATE EE 1998
The $$MOSFET$$ switch in its on - state may be considered equivalent to
GATE EE 1998
The uncontrolled electronic switch employed in power electronic converters is
GATE EE 1998
In a commutation circuit employed to turn off an $$SCR$$, Satisfactory turn-off is obtained when.
GATE EE 1997
If a diode is connected in anti - parallel with a thyristor, then
GATE EE 1996
Which semiconductor power device out of the following is not a current triggered device?
GATE EE 1996
The Triac can be used only in
GATE EE 1996
Which of the following does not cause permanent damage of an $$SCR?$$
GATE EE 1995
Figure, show two thyristors each rated $$500A$$ (continuous) sharing a load current. Current through thyristor $$y$$ is $$120A.$$ The current through ...
GATE EE 1994
A switched mode power supply operating at $$20$$ $$kHz$$ to $$100$$ $$kHz$$ range uses as the main switching element
GATE EE 1994
A triac can be triggered by a gate pulse of __________ polarity
GATE EE 1993
The thermal resistance between the body of a power semiconductor device and the ambient is expressed as
Marks 2
GATE EE 2014 Set 2
The $$SCR$$ in the circuit shown has a latching current of $$40$$ $$mA.$$ A gate pulse of $$50$$ $$\mu s$$ is applied to the $$SCR$$. The maximum valu...
GATE EE 2013
Thyristor $$T$$ in the figure below is initially off and is triggered with a single pulse of width $$10\mu s.$$ It is given that $$L = \left( {{{100} ...
GATE EE 2009
Match the switch arrangements on the top row to be steady $$-$$ state $$V$$ - $$I$$ characteristics on the lower row. The steady state operating point...
GATE EE 2007
A $$1:1$$ pulse transformer $$(PT)$$ is used to trigger the $$SCR$$ in the adjacent figure. The $$SCR$$ is rated at $$1.5$$ $$kV$$, $$250$$ $$A$$ with...
GATE EE 2007
A $$1:1$$ pulse transformer $$(PT)$$ is used to trigger the $$SCR$$ in the adjacent figure. The $$SCR$$ is rated at $$1.5$$ $$kV$$, $$250$$ $$A$$ with...
GATE EE 2006
An $$SCR$$ having a turn ON time of $$5\,\,\mu \,\,\sec $$, latching current of $$50$$ $$mA$$ and holding current of $$40$$ $$mA$$ is triggered by a s...
GATE EE 2005
The figure shows the voltage across a power semiconductor device and the current through the device during a switching transition. Is the transition a...
GATE EE 2005
An electronic switch $$S$$ is required to block voltages of either polarity during its OFF state as shown in figure (a). This switch is required to c...
GATE EE 2004
A $$MOSFET$$ rated for $$15 A,$$ carries a periodic current as shown in figure. The ON state resistance of the MOSFET is $$0.15$$ $$\Omega .$$ The ave...