## Marks 1

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Four power semiconductor devices are shown in the figure along with their relevant terminals. The device(s) that can car...
GATE EE 2018
For the power semiconductor devices $$IGBT, MOSFET,$$ Diode and Thyristor, which one of the following statements is TRUE...
GATE EE 2017 Set 1
A steady dc current of 100 A is flowing through a power module (S, D) as shown in Figure (a). The V-I characteristics of...
GATE EE 2016 Set 1
Figure shows four electronic switches $$(i), (ii), (iii)$$ and $$(iv).$$ Which of the switches can block voltages of eit...
GATE EE 2014 Set 1
The typical ratio of latching current to holding current in a $$20$$ $$A$$ thyristor is
GATE EE 2012
Circuit turn-off time of an $$SCR$$ is defined as the time
GATE EE 2011
Figure shows a composite switch consisting of a power transistor $$(BJT)$$ in series with a diode. Assuming that the tra...
GATE EE 2010
An $$SCR$$ is considered to be a semi - controlled device because
GATE EE 2009
The conduction loss versus device current characteristic of a power $$MOSFET$$ is best approximated by
GATE EE 2005
A bipolar junction transistor $$(BJT)$$ is used as a power control switch by biasing it in the cut-off region (OFF state...
GATE EE 2004
The triggering circuit of a thyristor is shown in figure. The thyristor requires a gate current of $$10$$ $$mA,$$ for gu...
GATE EE 2004
Figure shows a thyristor with the standard terminations of anode $$(A),$$ cathode $$(K),$$ gate $$(G)$$ and the differen...
GATE EE 2003
Figure shows a $$MOSFET$$ with an integral body diode. It is employed as a power switching device in the ON and OFF stat...
GATE EE 2003
The uncontrolled electronic switch employed in power electronic converters is
GATE EE 1998
The $$MOSFET$$ switch in its on - state may be considered equivalent to
GATE EE 1998
In a commutation circuit employed to turn off an $$SCR$$, Satisfactory turn-off is obtained when.
GATE EE 1998
If a diode is connected in anti - parallel with a thyristor, then
GATE EE 1997
Which semiconductor power device out of the following is not a current triggered device?
GATE EE 1996
The Triac can be used only in
GATE EE 1996
Which of the following does not cause permanent damage of an $$SCR?$$
GATE EE 1996
Figure, show two thyristors each rated $$500A$$ (continuous) sharing a load current. Current through thyristor $$y$$ is ...
GATE EE 1995
A switched mode power supply operating at $$20$$ $$kHz$$ to $$100$$ $$kHz$$ range uses as the main switching element
GATE EE 1994
A triac can be triggered by a gate pulse of __________ polarity
GATE EE 1994
The thermal resistance between the body of a power semiconductor device and the ambient is expressed as
GATE EE 1993

## Marks 2

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The $$SCR$$ in the circuit shown has a latching current of $$40$$ $$mA.$$ A gate pulse of $$50$$ $$\mu s$$ is applied to...
GATE EE 2014 Set 2
Thyristor $$T$$ in the figure below is initially off and is triggered with a single pulse of width $$10\mu s.$$ It is gi...
GATE EE 2013
Match the switch arrangements on the top row to be steady $$-$$ state $$V$$ - $$I$$ characteristics on the lower row. Th...
GATE EE 2009
A $$1:1$$ pulse transformer $$(PT)$$ is used to trigger the $$SCR$$ in the adjacent figure. The $$SCR$$ is rated at $$1.... GATE EE 2007 A$$1:1$$pulse transformer$$(PT)$$is used to trigger the$$SCR$$in the adjacent figure. The$$SCR$$is rated at$$1....
GATE EE 2007
An $$SCR$$ having a turn ON time of $$5\,\,\mu \,\,\sec$$, latching current of $$50$$ $$mA$$ and holding current of $$4... GATE EE 2006 The figure shows the voltage across a power semiconductor device and the current through the device during a switching t... GATE EE 2005 An electronic switch$$S$$is required to block voltages of either polarity during its OFF state as shown in figure (a).... GATE EE 2005 A$$MOSFET$$rated for$$15 A, carries a periodic current as shown in figure. The ON state resistance of the MOSFET is...
GATE EE 2004

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