1
GATE EE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
The magnitude of the mid-band voltage gain of the circuit shown in figure is (assuming $${h_{fe}}$$ of the transistor to be $$100$$) GATE EE 2014 Set 1 Analog Electronics - Bjt and Mosfet Biasing Question 27 English
A
$$1$$
B
$$10$$
C
$$20$$
D
$$100$$
2
GATE EE 2007
MCQ (Single Correct Answer)
+1
-0.3
The common emitter forward current gain of the transistor shown is $${\beta _p} = 100.$$ The transistor is operating in GATE EE 2007 Analog Electronics - Bjt and Mosfet Biasing Question 6 English
A
Saturation region
B
Cut-off region
C
Reverse active region
D
Forward active region
3
GATE EE 2007
MCQ (Single Correct Answer)
+1
-0.3
The three terminal linear voltage regular is connected to a $$10\Omega $$ load resistor as shown in the figure. If $${V_{in}}$$ is $$10$$ $$V,$$ what is the power dissipated in the transistor GATE EE 2007 Analog Electronics - Bjt and Mosfet Biasing Question 5 English
A
$$0.6$$ $$W$$
B
$$4.2$$ $$W$$
C
$$2.4$$ $$W$$
D
$$5.4$$ $$W$$
4
GATE EE 2005
MCQ (Single Correct Answer)
+1
-0.3
Assume that the $$N$$-channel $$MOSFET$$ shown in figure is ideal, and that its threshold voltage is The voltage $${\rm I}V,$$ the voltage $${{V_{ab}}}$$ between nodes $$'a'$$ and $$'b'$$ is GATE EE 2005 Analog Electronics - Bjt and Mosfet Biasing Question 28 English
A
$$5V$$
B
$$2V$$
C
$$1V$$
D
$$0V$$
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