1
GATE EE 2005
+1
-0.3
Assume that the $$N$$-channel $$MOSFET$$ shown in figure is ideal, and that its threshold voltage is The voltage $${\rm I}V,$$ the voltage $${{V_{ab}}}$$ between nodes $$'a'$$ and $$'b'$$ is
A
$$5V$$
B
$$2V$$
C
$$1V$$
D
$$0V$$
2
GATE EE 2004
+1
-0.3
Two perfectly matched silicon transistors are connected as shown in figure. The value of the current $${\rm I}$$ is
A
$$0$$ mA
B
$$2.3$$ mA
C
$$4.3$$ mA
D
$$7.3$$ mA
3
GATE EE 2004
+1
-0.3
A bipolar junction transistor (BJT) is used as a power control switch by biasing it in the cutoff region (OFF state) or in the saturation region (ON state). In the ON state, for the BJT
A
both the base-emitter and base-collector junctions are reverse biased
B
the base-emitter junctions is reverse biased, and the base-collector junction is forward biased
C
the base-emitter junction is forward biased, and the base-collector junction is reverse biased
D
both the base-emitter and base-collector junctions are forward biased
4
GATE EE 2003
+1
-0.3
In the circuit of figure shown, assume that the transistor has $${h_{fe}} = 99$$ and $${V_{BE}} = 0.7V.$$
The value of collector current $${{\rm I}_C}$$ of the transistor is approximately
A
$$\left[ {3.3/3.3} \right]\,mA$$
B
$$\left[ {3.3/\left( {3.3 + 0.33} \right)} \right]\,mA$$
C
$$\left[ {3.3/33} \right]\,mA$$
D
$$\left[ {3.3/\left( {33 + 33} \right)} \right]\,mA$$
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