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1

GATE EE 2005

MCQ (Single Correct Answer)
Assume that the $$N$$-channel $$MOSFET$$ shown in figure is ideal, and that its threshold voltage is The voltage $${\rm I}V,$$ the voltage $${{V_{ab}}}$$ between nodes $$'a'$$ and $$'b'$$ is
A
$$5V$$
B
$$2V$$
C
$$1V$$
D
$$0V$$
2

GATE EE 2004

MCQ (Single Correct Answer)
A bipolar junction transistor (BJT) is used as a power control switch by biasing it in the cutoff region (OFF state) or in the saturation region (ON state). In the ON state, for the BJT
A
both the base-emitter and base-collector junctions are reverse biased
B
the base-emitter junctions is reverse biased, and the base-collector junction is forward biased
C
the base-emitter junction is forward biased, and the base-collector junction is reverse biased
D
both the base-emitter and base-collector junctions are forward biased
3

GATE EE 2004

MCQ (Single Correct Answer)
Two perfectly matched silicon transistors are connected as shown in figure. The value of the current $${\rm I}$$ is
A
$$0$$ mA
B
$$2.3$$ mA
C
$$4.3$$ mA
D
$$7.3$$ mA
4

GATE EE 2003

MCQ (Single Correct Answer)
The variation of drain current with gate-to-source voltage $$\left( {{{\rm I}_D} - {V_{GS}}} \right.$$ characteristic$$\left. \, \right)$$ of a MOSFET is shown in Figure. The MOSFET is
A
an n-channel depletion mode device
B
an n-channel enhancement mode device
C
a p-channel depletion mode device
D
a p-channel enhancement mode device

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