1
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
In the circuit of figure shown, assume that the transistor has $${h_{fe}} = 99$$ and $${V_{BE}} = 0.7V.$$
The value of collector current $${{\rm I}_C}$$ of the transistor is approximately GATE EE 2003 Analog Electronics - Bjt and Mosfet Biasing Question 35 English
A
$$\left[ {3.3/3.3} \right]\,mA$$
B
$$\left[ {3.3/\left( {3.3 + 0.33} \right)} \right]\,mA$$
C
$$\left[ {3.3/33} \right]\,mA$$
D
$$\left[ {3.3/\left( {33 + 33} \right)} \right]\,mA$$
2
GATE EE 1999
MCQ (Single Correct Answer)
+1
-0.3
The enhancement type n-channel MOSFET is represented by the symbol
A
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 36 English Option 1
B
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 36 English Option 2
C
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 36 English Option 3
D
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 36 English Option 4
3
GATE EE 1998
MCQ (Single Correct Answer)
+1
-0.3
One of the applications of current mirror is
A
Output current limiting
B
Obtaining a very high current gain
C
Current feedback
D
Temperature stabilized biasing
4
GATE EE 1996
MCQ (Single Correct Answer)
+1
-0.3
The depletion region (or) space charge region (or) transition region in a semiconductor $$p-n$$ junction diode has
A
electrons and holes
B
positive ions and electrons
C
positive and negative ions
D
negative ions and holes

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