1
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
Two perfectly matched silicon transistors are connected as shown in figure. The value of the current $${\rm I}$$ is GATE EE 2004 Analog Electronics - Bjt and Mosfet Biasing Question 31 English
A
$$0$$ mA
B
$$2.3$$ mA
C
$$4.3$$ mA
D
$$7.3$$ mA
2
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
In the circuit of figure shown, assume that the transistor has $${h_{fe}} = 99$$ and $${V_{BE}} = 0.7V.$$
The value of collector current $${{\rm I}_C}$$ of the transistor is approximately GATE EE 2003 Analog Electronics - Bjt and Mosfet Biasing Question 33 English
A
$$\left[ {3.3/3.3} \right]\,mA$$
B
$$\left[ {3.3/\left( {3.3 + 0.33} \right)} \right]\,mA$$
C
$$\left[ {3.3/33} \right]\,mA$$
D
$$\left[ {3.3/\left( {33 + 33} \right)} \right]\,mA$$
3
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
The variation of drain current with gate-to-source voltage $$\left( {{{\rm I}_D} - {V_{GS}}} \right.$$ characteristic$$\left. \, \right)$$ of a MOSFET is shown in Figure. The MOSFET is GATE EE 2003 Analog Electronics - Bjt and Mosfet Biasing Question 32 English
A
an n-channel depletion mode device
B
an n-channel enhancement mode device
C
a p-channel depletion mode device
D
a p-channel enhancement mode device
4
GATE EE 1999
MCQ (Single Correct Answer)
+1
-0.3
The enhancement type n-channel MOSFET is represented by the symbol
A
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 34 English Option 1
B
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 34 English Option 2
C
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 34 English Option 3
D
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 34 English Option 4
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