1
GATE EE 2015 Set 1
Numerical
+1
-0
In the given circuit, the silicon transistor has $$\beta $$ $$=75$$ and a collector voltage $${V_C} = 9\,V.$$ Then the ratio of $${R_B}$$ and $${R_C}$$ is ___________. GATE EE 2015 Set 1 Analog Electronics - Bjt and Mosfet Biasing Question 23 English
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2
GATE EE 2015 Set 2
MCQ (Single Correct Answer)
+1
-0.3
When a bipolar junction transistor is operating in the saturation mode, which one of the following statements is TRUE about the state of its collector-base (CB) and the base-emitter (BE) junctions?
A
The CB junction is forward biased and the BE junction is reverse biased.
B
The CB junction is reverse biased and the BE junction is forward biased.
C
Both the CB and BE junctions are forward biased.
D
Both the CB and BE junctions are reverse biased.
3
GATE EE 2015 Set 2
Numerical
+1
-0
In the following circuit, the transistor is in active mode and $${V_C} = 2V.$$ To get $${V_C} = 4V,$$ we replace $${R_C}$$ with $${R_C}.$$ Then the ratio $$R{'_C}/{R_C}$$ is __________. GATE EE 2015 Set 2 Analog Electronics - Bjt and Mosfet Biasing Question 25 English
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4
GATE EE 2014 Set 2
Numerical
+1
-0
The transistor in the given circuit should always be in active region. Take $${V_{CE\left( {sat} \right)}} = 0.2\,\,V,\,\,\,{V_{BE}} = 0.7\,\,V.\,\,\,$$ The maximum value of $${R_C}$$ in $$\Omega $$ which can be used, is __________. GATE EE 2014 Set 2 Analog Electronics - Bjt and Mosfet Biasing Question 27 English
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