1
GATE EE 1999
MCQ (Single Correct Answer)
+1
-0.3
The enhancement type n-channel MOSFET is represented by the symbol
A
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 33 English Option 1
B
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 33 English Option 2
C
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 33 English Option 3
D
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 33 English Option 4
2
GATE EE 1998
MCQ (Single Correct Answer)
+1
-0.3
One of the applications of current mirror is
A
Output current limiting
B
Obtaining a very high current gain
C
Current feedback
D
Temperature stabilized biasing
3
GATE EE 1996
MCQ (Single Correct Answer)
+1
-0.3
The depletion region (or) space charge region (or) transition region in a semiconductor $$p-n$$ junction diode has
A
electrons and holes
B
positive ions and electrons
C
positive and negative ions
D
negative ions and holes
4
GATE EE 1994
MCQ (Single Correct Answer)
+1
-0.3
In the transistor circuit shown in figure. Collector to ground voltage is $$+20V.$$ Which of the following is the probable cause of error? GATE EE 1994 Analog Electronics - Bjt and Mosfet Biasing Question 7 English
A
Collector Emitter terminals shorted
B
Emitter to ground connection open
C
$$10\,\,k\Omega $$ resistor open
D
Collector base terminals shorted
GATE EE Subjects
EXAM MAP
Medical
NEET
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
Civil Services
UPSC Civil Service
CBSE
Class 12