1
GATE EE 1999
MCQ (Single Correct Answer)
+1
-0.3
The enhancement type n-channel MOSFET is represented by the symbol
A
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 33 English Option 1
B
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 33 English Option 2
C
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 33 English Option 3
D
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 33 English Option 4
2
GATE EE 1998
MCQ (Single Correct Answer)
+1
-0.3
One of the applications of current mirror is
A
Output current limiting
B
Obtaining a very high current gain
C
Current feedback
D
Temperature stabilized biasing
3
GATE EE 1996
MCQ (Single Correct Answer)
+1
-0.3
The depletion region (or) space charge region (or) transition region in a semiconductor $$p-n$$ junction diode has
A
electrons and holes
B
positive ions and electrons
C
positive and negative ions
D
negative ions and holes
4
GATE EE 1994
MCQ (Single Correct Answer)
+1
-0.3
In the transistor circuit shown in figure. Collector to ground voltage is $$+20V.$$ Which of the following is the probable cause of error? GATE EE 1994 Analog Electronics - Bjt and Mosfet Biasing Question 7 English
A
Collector Emitter terminals shorted
B
Emitter to ground connection open
C
$$10\,\,k\Omega $$ resistor open
D
Collector base terminals shorted
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