1
GATE EE 1999
MCQ (Single Correct Answer)
+1
-0.3
The enhancement type n-channel MOSFET is represented by the symbol
2
GATE EE 1998
MCQ (Single Correct Answer)
+1
-0.3
One of the applications of current mirror is
3
GATE EE 1996
MCQ (Single Correct Answer)
+1
-0.3
The depletion region (or) space charge region (or) transition region in a semiconductor $$p-n$$ junction diode has
4
GATE EE 1994
MCQ (Single Correct Answer)
+1
-0.3
In the transistor circuit shown in figure. Collector to ground voltage is $$+20V.$$ Which of the following is the probable cause of error?
Questions Asked from Bjt and Mosfet Biasing (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE EE Subjects
Electric Circuits
Electromagnetic Fields
Signals and Systems
Electrical Machines
Engineering Mathematics
General Aptitude
Power System Analysis
Electrical and Electronics Measurement
Analog Electronics
Control Systems
Power Electronics