1
GATE EE 2014 Set 2
Numerical
+1
-0
The transistor in the given circuit should always be in active region. Take $${V_{CE\left( {sat} \right)}} = 0.2\,\,V,\,\,\,{V_{BE}} = 0.7\,\,V.\,\,\,$$ The maximum value of $${R_C}$$ in $$\Omega $$ which can be used, is __________. GATE EE 2014 Set 2 Analog Electronics - Bjt and Mosfet Biasing Question 26 English
Your input ____
2
GATE EE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
The magnitude of the mid-band voltage gain of the circuit shown in figure is (assuming $${h_{fe}}$$ of the transistor to be $$100$$) GATE EE 2014 Set 1 Analog Electronics - Bjt and Mosfet Biasing Question 27 English
A
$$1$$
B
$$10$$
C
$$20$$
D
$$100$$
3
GATE EE 2007
MCQ (Single Correct Answer)
+1
-0.3
The common emitter forward current gain of the transistor shown is $${\beta _p} = 100.$$ The transistor is operating in GATE EE 2007 Analog Electronics - Bjt and Mosfet Biasing Question 6 English
A
Saturation region
B
Cut-off region
C
Reverse active region
D
Forward active region
4
GATE EE 2007
MCQ (Single Correct Answer)
+1
-0.3
The three terminal linear voltage regular is connected to a $$10\Omega $$ load resistor as shown in the figure. If $${V_{in}}$$ is $$10$$ $$V,$$ what is the power dissipated in the transistor GATE EE 2007 Analog Electronics - Bjt and Mosfet Biasing Question 5 English
A
$$0.6$$ $$W$$
B
$$4.2$$ $$W$$
C
$$2.4$$ $$W$$
D
$$5.4$$ $$W$$
GATE EE Subjects
EXAM MAP
Medical
NEET
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
CBSE
Class 12