1
GATE EE 2015 Set 2
Numerical
+1
-0
In the following circuit, the transistor is in active mode and $${V_C} = 2V.$$ To get $${V_C} = 4V,$$ we replace $${R_C}$$ with $${R_C}.$$ Then the ratio $$R{'_C}/{R_C}$$ is __________. GATE EE 2015 Set 2 Analog Electronics - Bjt and Mosfet Biasing Question 26 English
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2
GATE EE 2014 Set 2
Numerical
+1
-0
The transistor in the given circuit should always be in active region. Take $${V_{CE\left( {sat} \right)}} = 0.2\,\,V,\,\,\,{V_{BE}} = 0.7\,\,V.\,\,\,$$ The maximum value of $${R_C}$$ in $$\Omega $$ which can be used, is __________. GATE EE 2014 Set 2 Analog Electronics - Bjt and Mosfet Biasing Question 28 English
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3
GATE EE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
The magnitude of the mid-band voltage gain of the circuit shown in figure is (assuming $${h_{fe}}$$ of the transistor to be $$100$$) GATE EE 2014 Set 1 Analog Electronics - Bjt and Mosfet Biasing Question 29 English
A
$$1$$
B
$$10$$
C
$$20$$
D
$$100$$
4
GATE EE 2007
MCQ (Single Correct Answer)
+1
-0.3
The three terminal linear voltage regular is connected to a $$10\Omega $$ load resistor as shown in the figure. If $${V_{in}}$$ is $$10$$ $$V,$$ what is the power dissipated in the transistor GATE EE 2007 Analog Electronics - Bjt and Mosfet Biasing Question 7 English
A
$$0.6$$ $$W$$
B
$$4.2$$ $$W$$
C
$$2.4$$ $$W$$
D
$$5.4$$ $$W$$
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