1
GATE EE 2007
MCQ (Single Correct Answer)
+1
-0.3
The common emitter forward current gain of the transistor shown is $${\beta _p} = 100.$$ The transistor is operating in GATE EE 2007 Analog Electronics - Bjt and Mosfet Biasing Question 8 English
A
Saturation region
B
Cut-off region
C
Reverse active region
D
Forward active region
2
GATE EE 2005
MCQ (Single Correct Answer)
+1
-0.3
Assume that the $$N$$-channel $$MOSFET$$ shown in figure is ideal, and that its threshold voltage is The voltage $${\rm I}V,$$ the voltage $${{V_{ab}}}$$ between nodes $$'a'$$ and $$'b'$$ is GATE EE 2005 Analog Electronics - Bjt and Mosfet Biasing Question 30 English
A
$$5V$$
B
$$2V$$
C
$$1V$$
D
$$0V$$
3
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
Two perfectly matched silicon transistors are connected as shown in figure. The value of the current $${\rm I}$$ is GATE EE 2004 Analog Electronics - Bjt and Mosfet Biasing Question 32 English
A
$$0$$ mA
B
$$2.3$$ mA
C
$$4.3$$ mA
D
$$7.3$$ mA
4
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
A bipolar junction transistor (BJT) is used as a power control switch by biasing it in the cutoff region (OFF state) or in the saturation region (ON state). In the ON state, for the BJT
A
both the base-emitter and base-collector junctions are reverse biased
B
the base-emitter junctions is reverse biased, and the base-collector junction is forward biased
C
the base-emitter junction is forward biased, and the base-collector junction is reverse biased
D
both the base-emitter and base-collector junctions are forward biased
GATE EE Subjects
EXAM MAP