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1

### GATE EE 2008

Two perfectly matched silicon transistors are connected as shown in the figure. Assuming the $$\beta$$ of the transistors to be very high and forward voltage drop to be $$0.7V,$$ the value of current $${\rm I}$$ is (assume diode $$(D)$$ is ideal) A
$$0$$ $$mA$$
B
$$3.6$$ $$mA$$
C
$$4.3$$ $$mA$$
D
$$5.7$$ $$mA$$
2

### GATE EE 2006

Consider the circuit shown in figure. If the $$\beta$$ of the transistor is $$30$$ and $${{\rm I}_{CBO}}$$ is $$20$$ $$nA$$ and the input voltage is $$5V$$ then the transistor would be operating in A
Saturation region
B
Active region
C
Break down region
D
Cut-off region
3

### GATE EE 2005

Assume that the threshold voltage of the $$N$$-channel $$MOSFET$$ shown in figure is $$0.75$$ $$V.$$ The output characteristics of the $$MOSFET$$ are also shown  The Transconductance of the $$MOSFET$$ is

A
$$0.75$$ $$mS$$
B
$$1$$ $$mS$$
C
$$2$$ $$mS$$
D
$$10$$ $$mS$$
4

### GATE EE 2005

Assume that the threshold voltage of the $$N$$-channel $$MOSFET$$ shown in figure is $$0.75$$ $$V.$$ The output characteristics of the $$MOSFET$$ are also shown  The voltage gain of the amplifier is

A
$$+5$$
B
$$-7.5$$
C
$$+10$$
D
$$-10$$
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