1
GATE EE 2010
MCQ (Single Correct Answer)
+2
-0.6
The transistor circuit shown uses a silicon transistor with $${V_{BE}} = 0.7V,{{\rm I}_C} \approx {{\rm I}_E}$$ and a $$DC$$ current gain of $$100.$$ The value of $${V_0}$$ is
2
GATE EE 2008
MCQ (Single Correct Answer)
+2
-0.6
Two perfectly matched silicon transistors are connected as shown in the figure. Assuming the $$\beta $$ of the transistors to be very high and forward voltage drop to be $$0.7V,$$ the value of current $${\rm I}$$ is (assume diode $$(D)$$ is ideal)
3
GATE EE 2006
MCQ (Single Correct Answer)
+2
-0.6
Consider the circuit shown in figure. If the $$\beta $$ of the transistor is $$30$$ and $${{\rm I}_{CBO}}$$ is $$20$$ $$nA$$ and the input voltage is $$5V$$ then the transistor would be operating in
4
GATE EE 2005
MCQ (Single Correct Answer)
+2
-0.6
Assume that the threshold voltage of the $$N$$-channel $$MOSFET$$ shown in figure is $$0.75$$ $$V.$$ The output characteristics of the $$MOSFET$$ are also shown
The Transconductance of the $$MOSFET$$ is
GATE EE Subjects
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Electric Circuits
Electrical Machines
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Power System Analysis
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Electromagnetic Fields
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Electrical and Electronics Measurement
General Aptitude