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1

### GATE EE 2010

The transistor circuit shown uses a silicon transistor with $${V_{BE}} = 0.7V,{{\rm I}_C} \approx {{\rm I}_E}$$ and a $$DC$$ current gain of $$100.$$ The value of $${V_0}$$ is
A
$$4.65$$ $$V$$
B
$$5$$ $$V$$
C
$$6.3$$ $$V$$
D
$$7.32$$ $$V$$
2

### GATE EE 2008

Two perfectly matched silicon transistors are connected as shown in the figure. Assuming the $$\beta$$ of the transistors to be very high and forward voltage drop to be $$0.7V,$$ the value of current $${\rm I}$$ is (assume diode $$(D)$$ is ideal)
A
$$0$$ $$mA$$
B
$$3.6$$ $$mA$$
C
$$4.3$$ $$mA$$
D
$$5.7$$ $$mA$$
3

### GATE EE 2006

Consider the circuit shown in figure. If the $$\beta$$ of the transistor is $$30$$ and $${{\rm I}_{CBO}}$$ is $$20$$ $$nA$$ and the input voltage is $$5V$$ then the transistor would be operating in
A
Saturation region
B
Active region
C
Break down region
D
Cut-off region
4

### GATE EE 2005

Assume that the threshold voltage of the $$N$$-channel $$MOSFET$$ shown in figure is $$0.75$$ $$V.$$ The output characteristics of the $$MOSFET$$ are also shown

The Transconductance of the $$MOSFET$$ is

A
$$0.75$$ $$mS$$
B
$$1$$ $$mS$$
C
$$2$$ $$mS$$
D
$$10$$ $$mS$$
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