1
GATE EE 2005
+2
-0.6
Assume that the threshold voltage of the $$N$$-channel $$MOSFET$$ shown in figure is $$0.75$$ $$V.$$ The output characteristics of the $$MOSFET$$ are also shown  The Transconductance of the $$MOSFET$$ is

A
$$0.75$$ $$mS$$
B
$$1$$ $$mS$$
C
$$2$$ $$mS$$
D
$$10$$ $$mS$$
2
GATE EE 2004
+2
-0.6
The value of $$R$$ for which the $$PMOS$$ transistor in Figure. $$Q$$ $$63$$ will be biased in linear region is A
$$220\,\Omega$$
B
$$470\,\Omega$$
C
$$680\,\Omega$$
D
$$1200\,\Omega$$
3
GATE EE 2003
+2
-0.6
In the circuit shown, the current gain $$'\beta '$$ of the ideal transistor is $$10.$$ The operating point of the transistor $$\left( {{V_{CE}},{{\rm I}_C}} \right)$$ is A
$$(40V, 4A)$$
B
$$(0V, 4A)$$
C
$$(40V, 5A)$$
D
$$(15V, 4A)$$
4
GATE EE 2003
+2
-0.6
For the $$n$$-channel enhancement $$MOSFET$$ shown in figure,, the threshold voltage $${V_{th}}\,\, = \,\,2V.$$ The drain current $${I_D}$$ of the $$MOSFET$$ is $$4$$ $$mA$$ when the drain resistance $${R_D}$$ is $$1k\Omega .$$ If the value of $${R_D}$$ is increased to $$4\Omega ,$$ drain current $${I_D}$$ will become A
$$2.8$$ mA
B
$$2.0$$ mA
C
$$1.4$$ mA
D
$$1.0$$ mA
GATE EE Subjects
Electric Circuits
Electromagnetic Fields
Signals and Systems
Electrical Machines
Engineering Mathematics
General Aptitude
Power System Analysis
Electrical and Electronics Measurement
Analog Electronics
Control Systems
Power Electronics
Digital Electronics
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