1
GATE EE 2005
+2
-0.6
Assume that the threshold voltage of the $$N$$-channel $$MOSFET$$ shown in figure is $$0.75$$ $$V.$$ The output characteristics of the $$MOSFET$$ are also shown

The Transconductance of the $$MOSFET$$ is

A
$$0.75$$ $$mS$$
B
$$1$$ $$mS$$
C
$$2$$ $$mS$$
D
$$10$$ $$mS$$
2
GATE EE 2004
+2
-0.6
The value of $$R$$ for which the $$PMOS$$ transistor in Figure. $$Q$$ $$63$$ will be biased in linear region is
A
$$220\,\Omega$$
B
$$470\,\Omega$$
C
$$680\,\Omega$$
D
$$1200\,\Omega$$
3
GATE EE 2003
+2
-0.6
In the circuit shown, the current gain $$'\beta '$$ of the ideal transistor is $$10.$$ The operating point of the transistor $$\left( {{V_{CE}},{{\rm I}_C}} \right)$$ is
A
$$(40V, 4A)$$
B
$$(0V, 4A)$$
C
$$(40V, 5A)$$
D
$$(15V, 4A)$$
4
GATE EE 2003
+2
-0.6
For the $$n$$-channel enhancement $$MOSFET$$ shown in figure,, the threshold voltage $${V_{th}}\,\, = \,\,2V.$$ The drain current $${I_D}$$ of the $$MOSFET$$ is $$4$$ $$mA$$ when the drain resistance $${R_D}$$ is $$1k\Omega .$$ If the value of $${R_D}$$ is increased to $$4\Omega ,$$ drain current $${I_D}$$ will become
A
$$2.8$$ mA
B
$$2.0$$ mA
C
$$1.4$$ mA
D
$$1.0$$ mA
EXAM MAP
Medical
NEET