1
GATE EE 2017 Set 2
+2
-0.6
For the circuit shown in the figure below, it is given that $${V_{CE}} = {{{V_{CC}}} \over 2}.$$ The transistor has $$\beta = 29$$ and $${V_{BE}} = 0.7\,\,V$$ when the $$B$$-$$E$$ junction is forward biased. For this circuit, the value of $${{{R_B}} \over R}$$ is

A
$$43$$
B
$$92$$
C
$$121$$
D
$$129$$
2
GATE EE 2012
+2
-0.6
The voltage gain $${A_V}$$ of the circuit shown below is A
$$\left| {{A_V}} \right| \approx 200$$
B
$$\left| {{A_V}} \right| \approx 100$$
C
$$\left| {{A_V}} \right| \approx 20$$
D
$$\left| {{A_V}} \right| \approx 10$$
3
GATE EE 2011
+2
-0.6
The transistor used in the circuit shown below has a $$\beta$$ of $$30$$ and $${{\rm I}_{CBO}}$$ is negligible. If the forward voltage drop of diode is $$0.7V.$$ Then the current through collector will be

A
$$168$$ $$mA$$
B
$$108$$ $$mA$$
C
$$20.54$$ $$mA$$
D
$$5.36$$ $$mA$$
4
GATE EE 2010
+2
-0.6
The transistor circuit shown uses a silicon transistor with $${V_{BE}} = 0.7V,{{\rm I}_C} \approx {{\rm I}_E}$$ and a $$DC$$ current gain of $$100.$$ The value of $${V_0}$$ is A
$$4.65$$ $$V$$
B
$$5$$ $$V$$
C
$$6.3$$ $$V$$
D
$$7.32$$ $$V$$
GATE EE Subjects
Electromagnetic Fields
Signals and Systems
Engineering Mathematics
General Aptitude
Power Electronics
Power System Analysis
Analog Electronics
Control Systems
Digital Electronics
Electrical Machines
Electric Circuits
Electrical and Electronics Measurement
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