1
GATE EE 2012
MCQ (Single Correct Answer)
+2
-0.6
The voltage gain $${A_V}$$ of the circuit shown below is GATE EE 2012 Analog Electronics - Bjt and Mosfet Biasing Question 13 English
A
$$\left| {{A_V}} \right| \approx 200$$
B
$$\left| {{A_V}} \right| \approx 100$$
C
$$\left| {{A_V}} \right| \approx 20$$
D
$$\left| {{A_V}} \right| \approx 10$$
2
GATE EE 2011
MCQ (Single Correct Answer)
+2
-0.6
The transistor used in the circuit shown below has a $$\beta $$ of $$30$$ and $${{\rm I}_{CBO}}$$ is negligible. GATE EE 2011 Analog Electronics - Bjt and Mosfet Biasing Question 14 English

If the forward voltage drop of diode is $$0.7V.$$ Then the current through collector will be

A
$$168$$ $$mA$$
B
$$108$$ $$mA$$
C
$$20.54$$ $$mA$$
D
$$5.36$$ $$mA$$
3
GATE EE 2010
MCQ (Single Correct Answer)
+2
-0.6
The transistor circuit shown uses a silicon transistor with $${V_{BE}} = 0.7V,{{\rm I}_C} \approx {{\rm I}_E}$$ and a $$DC$$ current gain of $$100.$$ The value of $${V_0}$$ is GATE EE 2010 Analog Electronics - Bjt and Mosfet Biasing Question 15 English
A
$$4.65$$ $$V$$
B
$$5$$ $$V$$
C
$$6.3$$ $$V$$
D
$$7.32$$ $$V$$
4
GATE EE 2008
MCQ (Single Correct Answer)
+2
-0.6
Two perfectly matched silicon transistors are connected as shown in the figure. Assuming the $$\beta $$ of the transistors to be very high and forward voltage drop to be $$0.7V,$$ the value of current $${\rm I}$$ is (assume diode $$(D)$$ is ideal) GATE EE 2008 Analog Electronics - Bjt and Mosfet Biasing Question 2 English
A
$$0$$ $$mA$$
B
$$3.6$$ $$mA$$
C
$$4.3$$ $$mA$$
D
$$5.7$$ $$mA$$
GATE EE Subjects
EXAM MAP
Medical
NEETAIIMS
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
Civil Services
UPSC Civil Service
Defence
NDA
Staff Selection Commission
SSC CGL Tier I
CBSE
Class 12