1
GATE EE 2003
+2
-0.6
For the $$n$$-channel enhancement $$MOSFET$$ shown in figure,, the threshold voltage $${V_{th}}\,\, = \,\,2V.$$ The drain current $${I_D}$$ of the $$MOSFET$$ is $$4$$ $$mA$$ when the drain resistance $${R_D}$$ is $$1k\Omega .$$ If the value of $${R_D}$$ is increased to $$4\Omega ,$$ drain current $${I_D}$$ will become A
$$2.8$$ mA
B
$$2.0$$ mA
C
$$1.4$$ mA
D
$$1.0$$ mA
2
GATE EE 2003
+2
-0.6
In the circuit shown, the current gain $$'\beta '$$ of the ideal transistor is $$10.$$ The operating point of the transistor $$\left( {{V_{CE}},{{\rm I}_C}} \right)$$ is A
$$(40V, 4A)$$
B
$$(0V, 4A)$$
C
$$(40V, 5A)$$
D
$$(15V, 4A)$$
3
GATE EE 2001
+2
-0.6
An $$N$$-channel $$JFET$$ having a pinch-off voltage $$\left( {{V_P}} \right)$$ of $$-5V$$ shows a transconductance (gm) of $$1$$ $$mA/V$$ when the applied Gate to source voltage $$\left( {{V_{GS}}} \right)$$ is $$-3V.$$ Its maximum transconductance (in $$mA/V$$) is
A
$$1.5$$
B
$$2.0$$
C
$$2.5$$
D
$$3.0$$
4
GATE EE 2000
+2
-0.6
In the circuit of figure, the value of the base current $${{\rm I}_B}$$ will be A
$$0\,\mu A$$
B
$$18.2\,\mu A$$
C
$$26.7\,\mu A$$
D
$$40\,\mu A$$
GATE EE Subjects
Electric Circuits
Electromagnetic Fields
Signals and Systems
Electrical Machines
Engineering Mathematics
General Aptitude
Power System Analysis
Electrical and Electronics Measurement
Analog Electronics
Control Systems
Power Electronics
Digital Electronics
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