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1

### GATE EE 2003

MCQ (Single Correct Answer)
For the $$n$$-channel enhancement $$MOSFET$$ shown in figure,, the threshold voltage $${V_{th}}\,\, = \,\,2V.$$ The drain current $${I_D}$$ of the $$MOSFET$$ is $$4$$ $$mA$$ when the drain resistance $${R_D}$$ is $$1k\Omega .$$ If the value of $${R_D}$$ is increased to $$4\Omega ,$$ drain current $${I_D}$$ will become
A
$$2.8$$ mA
B
$$2.0$$ mA
C
$$1.4$$ mA
D
$$1.0$$ mA
2

### GATE EE 2001

MCQ (Single Correct Answer)
An $$N$$-channel $$JFET$$ having a pinch-off voltage $$\left( {{V_P}} \right)$$ of $$-5V$$ shows a transconductance (gm) of $$1$$ $$mA/V$$ when the applied Gate to source voltage $$\left( {{V_{GS}}} \right)$$ is $$-3V.$$ Its maximum transconductance (in $$mA/V$$) is
A
$$1.5$$
B
$$2.0$$
C
$$2.5$$
D
$$3.0$$
3

### GATE EE 2000

MCQ (Single Correct Answer)
In the circuit of figure, the value of the base current $${{\rm I}_B}$$ will be
A
$$0\,\mu A$$
B
$$18.2\,\mu A$$
C
$$26.7\,\mu A$$
D
$$40\,\mu A$$
4

### GATE EE 1998

Subjective
A $$NPN$$ Si transistor is meant for low-current audio amplification. Match is following characteristic against their values.

## Answer

$$A - P,\,B - R,\,C - Q$$
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