1
GATE EE 2003
+2
-0.6
For the $$n$$-channel enhancement $$MOSFET$$ shown in figure,, the threshold voltage $${V_{th}}\,\, = \,\,2V.$$ The drain current $${I_D}$$ of the $$MOSFET$$ is $$4$$ $$mA$$ when the drain resistance $${R_D}$$ is $$1k\Omega .$$ If the value of $${R_D}$$ is increased to $$4\Omega ,$$ drain current $${I_D}$$ will become
A
$$2.8$$ mA
B
$$2.0$$ mA
C
$$1.4$$ mA
D
$$1.0$$ mA
2
GATE EE 2003
+2
-0.6
In the circuit shown, the current gain $$'\beta '$$ of the ideal transistor is $$10.$$ The operating point of the transistor $$\left( {{V_{CE}},{{\rm I}_C}} \right)$$ is
A
$$(40V, 4A)$$
B
$$(0V, 4A)$$
C
$$(40V, 5A)$$
D
$$(15V, 4A)$$
3
GATE EE 2001
+2
-0.6
An $$N$$-channel $$JFET$$ having a pinch-off voltage $$\left( {{V_P}} \right)$$ of $$-5V$$ shows a transconductance (gm) of $$1$$ $$mA/V$$ when the applied Gate to source voltage $$\left( {{V_{GS}}} \right)$$ is $$-3V.$$ Its maximum transconductance (in $$mA/V$$) is
A
$$1.5$$
B
$$2.0$$
C
$$2.5$$
D
$$3.0$$
4
GATE EE 2000
+2
-0.6
In the circuit of figure, the value of the base current $${{\rm I}_B}$$ will be
A
$$0\,\mu A$$
B
$$18.2\,\mu A$$
C
$$26.7\,\mu A$$
D
$$40\,\mu A$$
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