NEW
New Website Launch
Experience the best way to solve previous year questions with mock tests (very detailed analysis), bookmark your favourite questions, practice etc...
1

GATE EE 2003

MCQ (Single Correct Answer)
For the $$n$$-channel enhancement $$MOSFET$$ shown in figure,, the threshold voltage $${V_{th}}\,\, = \,\,2V.$$ The drain current $${I_D}$$ of the $$MOSFET$$ is $$4$$ $$mA$$ when the drain resistance $${R_D}$$ is $$1k\Omega .$$ If the value of $${R_D}$$ is increased to $$4\Omega ,$$ drain current $${I_D}$$ will become
A
$$2.8$$ mA
B
$$2.0$$ mA
C
$$1.4$$ mA
D
$$1.0$$ mA
2

GATE EE 2001

MCQ (Single Correct Answer)
An $$N$$-channel $$JFET$$ having a pinch-off voltage $$\left( {{V_P}} \right)$$ of $$-5V$$ shows a transconductance (gm) of $$1$$ $$mA/V$$ when the applied Gate to source voltage $$\left( {{V_{GS}}} \right)$$ is $$-3V.$$ Its maximum transconductance (in $$mA/V$$) is
A
$$1.5$$
B
$$2.0$$
C
$$2.5$$
D
$$3.0$$
3

GATE EE 2000

MCQ (Single Correct Answer)
In the circuit of figure, the value of the base current $${{\rm I}_B}$$ will be
A
$$0\,\mu A$$
B
$$18.2\,\mu A$$
C
$$26.7\,\mu A$$
D
$$40\,\mu A$$
4

GATE EE 1998

Subjective
A $$NPN$$ Si transistor is meant for low-current audio amplification. Match is following characteristic against their values.

Answer

$$A - P,\,B - R,\,C - Q$$

Joint Entrance Examination

JEE Main JEE Advanced WB JEE

Graduate Aptitude Test in Engineering

GATE CSE GATE ECE GATE EE GATE ME GATE CE GATE PI GATE IN

Medical

NEET

CBSE

Class 12